Hydride Vapor Phase Epitaxy for Current III–V and Nitride Semiconductor Compound Issues

Gil, Evelyne; André, Yves-Bernard; Cadoret, R.; Trassoudaine, Agnès

doi:10.1016/b978-0-444-63304-0.00002-0

Cited by 17 publications

(29 citation statements)

References 154 publications

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“…where index g is assigned to gaseous molecules and index c is for crystalline species. HVPE is known as a near-equilibrium condensation process: one can understand it as reacting almost immediately upon an increase of the supersaturation of the vapor phase that causes the return to equilibrium, which produces the solid [44]. On decreasing the supersaturation, for instance by the use of additional HCl in the vapor phase, reversible processes occur at the vapor-solid interface due to the volatility of the chlorides.…”

Section: Thermodynamics and Kinetics Of Hvpe Growthmentioning

confidence: 99%

Growth of long III-As NWs by hydride vapor phase epitaxy

Gil¹,

André²

2021

Nanotechnology

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Introduction I. Thermodynamics and kinetics of HVPE growth II. GaAs NWs grown by Au-catalysed VLS-HVPE II.1. Brief recall of the issues of early growth experiments of GaAs NWs II.2. Long untapered rodlike cubic GaAs NWs II.3. The polytypism issue in GaAs NWs with diameter less than 10 nm III. Integration of GaAs NWs on silicon substrate III.1. Introduction III.2. Au-catalysed VLS-HVPE of GaAs NWs on Si: the nucleation issue III.3. Au-catalysed VLS growth of GaAs:Si NWs on Si: the doping issue IV. Self-catalysed growth of GaAs and InAs NWs on silicon substrate IV.1. Thermodynamic conditions to form Ga and In liquid droplets from chloride gaseous molecules IV.2. Self-catalysed growth of GaAs NWs on Si IV.3. Growth of InAs NWs on Si Summary Abbreviation: nanowire=NW; nanowires=NWs; vapor liquid solid=VLS; vapor solid=VS.

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Section: Thermodynamics and Kinetics Of Hvpe Growthmentioning

confidence: 99%

Growth of long III-As NWs by hydride vapor phase epitaxy

Gil¹,

André²

2021

Nanotechnology

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“…We can envision that during a vapor phase growth (which in the case of HVPE is a close-to-equilibrium process), a non-equilibrium situation is created by supersaturating the GaCl and As 2 species, the system will be driven to produce the solid (GaAs)-as the maximum quantity of solid (GaAs) that will be produced is equal to such amount that is necessary to re-establish the state of equilibrium. Thus, the supersaturation SS of the vapor phase is related to the thermodynamic force ∆µ that is going to restore the equilibrium [48,85]. Thus, the SS can be expressed as:…”

Section: Hydride/halide Vapor Phase Epitaxy-reactor Process Optimizmentioning

confidence: 99%

“…This is just another example of a promising heteroepitaxial case. More on this topic could be found in our articles, patents and patent applications, as well in excellent comprehensive works such as [10,34,35,40,[46][47][48][49][50][51][52][53][54][55]61,62,85,100].…”

Section: More Prospective Heteroepitaxial Cases-znte On Gasb and Manymentioning

confidence: 99%

Thick Hydride Vapor Phase Heteroepitaxy: A Novel Approach to Growth of Nonlinear Optical Materials

Tassev

Vangala

2019

Crystals

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At the time when many nonlinear optical (NLO) materials for frequency conversion of laser sources in the mid and long-wave infrared have achieved their fundamental or technological limits, we propose heteroepitaxy as a solution to develop novel NLO materials. Heteroepitaxy, is the most applied method to combine two different materials—by growing one material on another. In this work we show that combining two binary materials in a ternary may significantly improve the NLO properties that are of great importance for the pursued applications. Plus, due to the closer lattice match to the related substrate, a ternary is always a more favorable heteroepitaxial case than the two completely different materials. We also discuss combining different growth methods—one close-to-equilibrium (e.g., hydride vapor phase epitaxy—HVPE) with one far-from-equilibrium (e.g., metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE)) growth processes—to explore new opportunities for the growth of novel heterostructures, including ternary layers with gradual change in composition. The combination of different materials by nature—organics with inorganics—in a hybrid quasi-phase matching (QPM) structure is another topic we briefly discuss, along with some innovative techniques for the fabrication of orientation-patterned (OP) templates, including such that are based on the most universal semiconductor material—Si. Still, the focus in this work is on a series of NLO materials—GaAs, GaP, ZnSe, GaSe, ZnTe, GaN… and some of their ternaries grown with high surface and crystalline quality on non-native substrates and on non-native OP templates using hydride vapor phase epitaxy (HVPE). The grown thick device quality QPM structures were used for further development of high power, compact, broadly tunable frequency conversion laser sources for the mid and longwave infrared with various applications in defense, security, industry, medicine and science.

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“…Then this parasitic nucleation, stealing from the flows, will weaken the local supply of chemicals needed for the real growth on the substrate surface, and produce in the same or similar reaction (6) additional HCl that may start etching back the already grown surface and, finally, will change over time the V/III ratio which, as it was pointed out by many authors [63,66], plays an important role in these processes.…”

Section: The Hvpe Growth Processmentioning

confidence: 99%

“…Things become even worse if the grower does not succeed in suppressing the parasitic nucleation that may happen upfront at the substrate in the mixing area, or even still on the nozzle edge, where gallium chloride and phosphine for the first time "see" each other. Then this parasitic nucleation, stealing from the flows, will weaken the local supply of chemicals needed for the real growth on the substrate surface, and produce in the same or similar reaction (6) additional HCl that may start etching back the already grown surface and, finally, will change over time the V/III ratio which, as it was pointed out by many authors [63,66], plays an important role in these processes.…”

Section: Combining Two Growth Approachesmentioning

confidence: 99%

Heteroepitaxy, an Amazing Contribution of Crystal Growth to the World of Optics and Electronics

Tassev

2017

Crystals

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Advances in Electronics and Optics are often preceded by discoveries in Crystal Growth theory and practice. This article represents in retrospect some of the most significant contributions of heteroepitaxy in these and some other areas-the strong impact of the three modes of heteroepitaxy on microelectronics and quantum optics, the big "push" of PENDEO epitaxy in development of Light Emitting Diodes, etc. A large part of the text is dedicated to heteroepitaxy of nonlinear optical materials grown on orientation-patterned templates and used in the development of new quasi-phase-matching frequency conversion laser sources. By achieving new frequency ranges such sources will result in a wide variety of applications in areas such as defense, security, industry, medicine, and science. Interesting facts from the scientific life of major contributors in the field are mixed in the text with fine details from growth experiments, chemical equations, results from material characterizations and some optical and crystallographic considerations-all these presented in a popular way but without neglecting their scientific importance and depth. The truth is that often heteroepitaxy is not just the better but the only available option. The truth is that delays in device development are usually due to gaps in materials research. In all this, miscommunication between different scientific communities always costs vain efforts, uncertainty, and years of going in a wrong scientific direction. With this article we aim to stimulate a constructive dialog that could lead to solutions of important interdisciplinary scientific and technical issues.

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Hydride Vapor Phase Epitaxy for Current III–V and Nitride Semiconductor Compound Issues

Cited by 17 publications

References 154 publications

Growth of long III-As NWs by hydride vapor phase epitaxy

Growth of long III-As NWs by hydride vapor phase epitaxy

Thick Hydride Vapor Phase Heteroepitaxy: A Novel Approach to Growth of Nonlinear Optical Materials

Heteroepitaxy, an Amazing Contribution of Crystal Growth to the World of Optics and Electronics

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