Hydrodynamic analysis of DC and AC hot-carrier transport in semiconductors

Gruzhinskis, V.; Starikov, E.; Shiktorov, P.; Reggiani, L.; Saraniti, Marco; Varani, L.

doi:10.1088/0268-1242/8/7/016

Cited by 31 publications

(15 citation statements)

References 37 publications

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“…The purpose of this subsection is only to present the main steps of the calculations; for more details the reader is referred to Ref. 18.…”

Section: A Linear Analysismentioning

confidence: 99%

“…18 The solution of the system of hydrodynamic equations depends on three coefficients, namely: the carrier reciprocal effectivemass in the direction of the electric field ͑here taken as the z axis͒ ͗m Ϫ1 ͘ϭ͗‫ץ‬ 2 ⑀/‫ץ‬p z 2 ͘ ͑p z being the z component of the carrier momentum, ⑀ the carrier energy, and the brackets meaning the average over the momentum distribution func-tion͒, and the phenomenological velocity v and energy ⑀ relaxation rates, respectively defined as v ϭ…”

Section: B Response Functions and Differential Mobilitymentioning

confidence: 99%

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A model noise temperature for nonlinear transport in semiconductors

Varani

Houlet

Vaissière

et al. 1996

Journal of Applied Physics

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We present an analytical modeling of the noise temperature associated with velocity fluctuations obtained in the framework of the linear-response theory around a steady state. The expressions are rigorously related to an eigenvalue expansion of the response matrix and are applicable to ohmic as well as to nonohmic ͑hot-carrier͒ conditions. Theory requires as input parameters the reciprocal carrier effective mass, the drift velocity, the carrier energy, the variance of velocity fluctuations, and the covariance of velocity-energy fluctuations as functions of the electric field in stationary and homogeneous conditions. The analytical results obtained for the case of holes in Si and electrons in GaAs at Tϭ300 K are validated by comparison with experiments.

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“…The purpose of this subsection is only to present the main steps of the calculations; for more details the reader is referred to Ref. 18.…”

Section: A Linear Analysismentioning

confidence: 99%

Section: B Response Functions and Differential Mobilitymentioning

confidence: 99%

A model noise temperature for nonlinear transport in semiconductors

Varani

Houlet

Vaissière

et al. 1996

Journal of Applied Physics

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“…These equations are derived by taking the first three moments of the Boltzmann transport equation. For the one-dimensional case (taking into account the electron-hole generation-recombination processes) these equations take the form [5]:…”

Section: Hydrodynamic Transport Modelmentioning

confidence: 99%

Hydrodynamic modelling of electron transport in submicron Hg_0.8Cd_0.2Te diodes

Daoudi

Belghachi

Palermo

et al. 2009

J. Phys.: Conf. Ser.

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Abstract. We simulate electron transport in ultra small mercury-cadmium-telluride n + -n-n + diodes using a hydrodynamic approach. A numerical staggered solution is employed to treat the coupled hydrodynamic and Poisson equations, where the spatial profiles of the main transport parameters within the diodes are analyzed including the Auger generationrecombination processes. Our numerical results show that, even for low applied voltages, impact ionization processes are activated and affect dramatically the current-voltage characteristics of the Hg 0.8 Cd 0.2 Te diode. IntroductionCarrier transport in advanced submicron devices is not always described with sufficient accuracy by the conventional drift-diffusion (DD) model. As a matter of fact, the DD model does not describe velocity overshoot, diffusion associated with carrier temperature gradients, or the dependence of impact ionization (II) rates on the carrier energy distributions. The limitations of the DD model indicate the need for more general transport models. Two of the more significant classes of such transport models are Monte Carlo (MC) and hydrodynamic (HD). The most accurate kinetic description is given by the MC method because it can take into account explicitly both the energy band-structure and the various scattering phenomena characteristics of the studied material. Therefore it enables a direct calculation of important transport quantities (distribution function, carrier density, drift velocity, mean energy, etc) but at a cost of long computation times and stochastic noise in the output data [1]. On the other hand, the results obtained from the MC simulations permit us also to calculate transport coefficients that can be used as input parameters for more simplified HD models. In this sense, the HD description of electron transport has been extensively applied to the analysis and design of semiconductor devices because it provides a useful compromise between computational simplicity and physical accuracy [2].In our previous work [3], we have demonstrated the robustness of the HD model to simulate the electronic transport in bulk HgCdTe (Mercury-Cadmium-Telluride, MCT) at 77 K. The majority of MCT-based devices contain a cadmium fraction x = 0.2 which allows, at 77 K, the detection in the 8-14 !m spectral region and which is thus a widely used alloy for infrared optoelectronics applications. The consequence of this alloy proportion is a narrow semiconductor band-gap of about 0.1 eV: in particular, degeneracy and impact ionization processes are activated from low electric fields of the order of 100 V/cm [4]. Despite of his wide interest, few results are available in the literature concerning a physical modelling of transport in MCT-based devices. In this paper, we present the simulation of one-dimensional Hg 0.8 Cd 0.2 Te n

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“…Such a situation can be realized in a superlattice (SL) with the dispersion law for a given SL period d as ε(p) = ∆[1 − cos(dp/ )] and m −1 (ε) = (d/ ) 2 (∆ − ε) by supposing that τ v (ε) and τ ε (ε) are independent of ε. In this case [5], for the large-and smallsignal response conductivities, σ(ω) and σ s (ω), respectively, one obtains…”

Section: Spectral Representation Of the Wave Formsmentioning

confidence: 99%