Hydrodynamic analysis of submicrometer <i>n+nn+</i> diodes for microwave generators

Gruzhinskis, V.; Starikov, E.; Shiktorov, P.; Reggiani, L.; Saraniti, Marco; Varani, L.

doi:10.1063/1.107516

Cited by 17 publications

(8 citation statements)

References 13 publications

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“…The Gunn and IMPATT diodes which already work at frequencies of 100-200 GHz 2-4 can be considered as prototypes for this class of sources. To extend the power generation of these devices into the submillimeter and THz frequency range different possibilities have recently been proposed, including frequency mixing and multiplication in Schottky barrier diodes, 5 reduction of the transit time in deep submicron Gunn-oscillators, 6 resonant tunneling in double barrier heterostructures, 7 photon-assisted tunneling in resonant tunnelling diodes, 8 ballistic motion of carriers with negative effective-mass, 9 and various plasma instabilities. [10][11][12] However, in these devices an increase in the generation frequency is usually accompanied with both an increase in the required current density 4 and a decrease in the absolute value of the negative differential resistance.…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo simulation of the generation of terahertz radiation in GaN

Starikov

Shiktorov

Gruz̆inskis

et al. 2001

Journal of Applied Physics

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Terahertz generation in submicron GaN diodes within the limited space-charge accumulation regime J. Appl. Phys. 98, 064507 (2005); 10.1063/1.2060956 Monte Carlo study of hot-carrier transport in bulk wurtzite GaN and modeling of a near-terahertz impact avalanche transit time diode J. Appl. Phys. 95, 7925 (2004); 10.1063/1.1702144 Monte Carlo analysis of GaN-based Gunn oscillators for microwave power generation J. Appl. Phys. 93, 4836 (2003); 10.1063/1.1562734 Monte Carlo calculation of electron initiated impact ionization in bulk zinc-blende and wurtzite GaNThe conditions for microwave power generation at low temperatures under optical phonon emission are analyzed by Monte Carlo simulations of both small-and large-signal responses in bulk zinc blende and wurtzite GaN. As a result of the high optical phonon energy and the strong interaction of electrons with optical phonons in GaN a general improvement on the transit-time resonance and a considerable increase in the maximum generation frequency and power can be achieved in comparison to the widely studied III-V materials such as GaAs and InP. A dynamic negative differential mobility caused by transit-time resonance occurs in a wide frequency range of about 0.05-3 THz and persists in the THz frequency range up to the liquid nitrogen temperature with doping levels up to about 5ϫ10 16 cm Ϫ3 . The efficiency of the amplification and generation is found to depend nonmonotonously on static and microwave electric field amplitudes, generation frequency, and doping level so that for each generation frequency there exists an optimal range of parameter values. Under optimal conditions a generation efficiency of about 1% to 2% can be achieved in the 0.5-1.5 THz frequency range.

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Section: Introductionmentioning

confidence: 99%

Monte Carlo simulation of the generation of terahertz radiation in GaN

Starikov

Shiktorov

Gruz̆inskis

et al. 2001

Journal of Applied Physics

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“…E ext is the external THz radiation expressed as E ext (t) = V ac cos(2π f ac t)/l, with ac intensity V ac and frequency f ac . We apply the hydrodynamic equations [20][21][22][23][24][25] to study the nonlinear dynamics in the In 0.53 Ga 0.47 As diode…”

Section: Hydrodynamic Simulation Of Chaotic Dynamics In Ingaas Thz Os...mentioning

confidence: 99%

“…Any small doping inhomogeneity in the NDV region can lead to the formation of domain and oscillations. [20] We assume that there is a slight doping fluctuation near each end of the diode. This fluctuation results in the formation of electric field domain and hence current oscillation.…”

Section: Hydrodynamic Simulation Of Chaotic Dynamics In Ingaas Thz Os...mentioning

confidence: 99%

Hydrodynamic simulation of chaotic dynamics in InGaAs oscillator in terahertz region*

Feng¹

2020

Chinese Phys. B

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Hydrodynamic calculations of the chaotic behaviors in n+nn+ In0.53Ga0.47As devices biased in terahertz (THz) electric field have been carried out. Their different transport characteristics have been carefully investigated by tuning the n-region parameters and the applied ac radiation. The oscillatory mode is found to transit between synchronization and chaos, as verified by the first return map. The transitions result from the mixture of the dc induced oscillation and the one driven by the ac radiation. Our findings will give further and thorough understanding of electron transport in In0.53Ga0.47As terahertz oscillator, which is a promising solid-state THz source.

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“…͑2͒-͑5͒ form a closed system of deterministic equations suitable for the numerical modeling of unipolar carrier transport in semiconductor devices under current operation mode. 8 In the opposite case of voltage operation mode an additional equation for the voltage drop between the structure terminals U(t) must be added: 8…”

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confidence: 99%

“…Furthermore, the same approach has been proved to describe satisfactorily both static and dynamic characteristics of the whole structure even when inside the active n-region carrier ballistic transport occurs at the characteristic scales of the order of, or even less than, the carrier mean-free path. [7][8][9][10] To account for fluctuations associated with single scattering events occurring at point x 0 and time t 0 of the device under test, the random impulsive force for such an event can be represented as…”

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confidence: 99%