Propagation properties of reactive hydrogen atoms generated by Pt/Al205 catalysts at low pressure were investigated by thermal etching experiments, It was found that the propagation distance of reactive hydrogen atoms is prolonged when the reactor pressure is decreased. The Pt/Al203 catalysts are used in low pressure organometallic vapor-phase epitaxy growth of GaAs using triefhylarsine. It is shown that carbon contamination in a substrate can be considerably reduced by the Pt/AI~O5 catalysts in a wider region compared with the case of atmospheric pressure growth.