Hydrogen Diffusion and Stabilization in Single-Crystal VO<sub>2</sub> Micro/Nanobeams by Direct Atomic Hydrogenation

Lin, Jian; Ji, Heng; Swift, Michael W.; Hardy, Will; Peng, Zhiwei; Fan, Xiujun; Nevidomskyy, Andriy H.; Tour, James M.; Natelson, Douglas

doi:10.1021/nl5030694

Cited by 69 publications

(94 citation statements)

References 40 publications

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“…This inference is in agreement with the data available in the literature [10,18,19,25]. In addition, hydrogen is retained in the films for a long time.…”

Section: Resultssupporting

confidence: 92%

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Modification of the Properties of Vanadium Oxide Thin Films by Plasma-Immersion Ion Implantation

Burdyukh

Berezina

Pergament

2018

Advances in Condensed Matter Physics

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The paper describes the effect of doping with hydrogen and tungsten by means of plasma-immersion ion implantation (PIII) on the properties of vanadium dioxide and hydrated vanadium pentoxide films. It is shown that the parameters of the metal-insulator phase transition in VO 2 thin films depend on the hydrogen implantation dose. Next, we explore the effect of PIII on composition, optical properties, and the internal electrochromic effect (IECE) in V 2 O 5 ⋅nH 2 O films. The variations in the composition and structure caused by the hydrogen insertion, as well as those caused by the electrochromic effect, are studied by nuclear magnetic resonance, thermogravimetry, Raman spectroscopy, and X-ray structural analysis. It is shown that the ion implantation-induced hydrogenation can substantially enhance the manifestation and performance of the IECE in V 2 O 5 xerogel films. Finally, the effect of PIII-assisted doping with W on the parameters of electrical switching in Au/V 2 O 5 ⋅nH 2 O/Au sandwich structures is examined. It is shown that implanting small tungsten doses improves the switching parameters after forming. When implanting large doses, switching is observed without electroforming, and if electroforming is applied, the switching effect, on the contrary, disappears.

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“…This inference is in agreement with the data available in the literature [10,18,19,25]. In addition, hydrogen is retained in the films for a long time.…”

Section: Resultssupporting

confidence: 92%

“…Therefore, it may be assumed that PIII leads to metallization (curve (3) in Figure 5). This assumption also agrees with the data presented in [19] where vanadium dioxide nanobeams have been hydrogenated in the hydrogen flow.…”

Section: Vanadium Dioxidesupporting

confidence: 92%

Modification of the Properties of Vanadium Oxide Thin Films by Plasma-Immersion Ion Implantation

Burdyukh

Berezina

Pergament

2018

Advances in Condensed Matter Physics

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“…We also plot values obtained using other exposure temperatures . An Arrhenius fit, shown on the right, yields an activation energy of = 0.6 ± 0.1 eV, similar to that reported for diffusion along the c-axis of VO2 24 and TiO2 12,13 . Combining the results we find ( ) ≈ 0.01 −0.6/ cm 2 s -1 along the rutile c-axis.…”

supporting

confidence: 76%

Visualization of one-dimensional diffusion and spontaneous segregation of hydrogen in single crystals of VO₂

Kasırga¹,

Coy²,

Park³

et al. 2016

Nanotechnology

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Hydrogen intercalation in solids is common, complicated, and very difficult to monitor. In a new approach to the problem, we have studied the profile of hydrogen diffusion in singlecrystal nanobeams and plates of VO2, exploiting the fact that hydrogen doping in this material leads to visible darkening near room temperature connected with the metalinsulator transition at 65 °C. We observe hydrogen diffusion along the rutile c-axis but not perpendicular to it, making this a highly one-dimensional diffusion system. We obtain an activated diffusion coefficient, ~. − ./ cm 2 sec -1 , applicable in metallic phase. In addition, we observe dramatic supercooling of the hydrogen-induced metallic phase and spontaneous segregation of the hydrogen into stripes implying that the diffusion process is highly nonlinear, even in the absence of defects. Similar complications may occur in hydrogen motion in other materials but are not revealed by conventional measurement techniques.KEYWORDS: vanadium dioxide, hydrogen doping, metal-insulator transition, 1D diffusion, optical microscopy TEXT Hydrogen dissolves in many solids, with effects on their physical properties which are relevant to storage 1 , catalysis, sensing 2 , and material degradation 3 . Understanding how hydrogen moves within a solid is thus important, but is very challenging because of the combination of the difficulty of detecting hydrogen, the complexity of the transport processes, and the sensitivity of kinetics and energetics to microscopic nonuniformity and defects 4 . It has traditionally been studied, predominantly in metals and semiconductors, by neutron scattering 5 , nuclear 6 and muon magnetic resonance 7 , and other techniques which do not yield spatial profiles. It is thus hard to know when deviations from a simple Fick's law behavior are relevant, such as when diffusion is guided by dislocations, grain boundaries or strain fields associated with twinning or structural modifications, or if there is spontaneous segregation. Recently, information on the spatial profile has been obtained using the change in color on hydrogenation of thin yttrium 8 and vanadium

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“…15) The authors of another work 13) show that sample conductivity measured by probe technique in spreading resistance mode changes after EBM; this is due to generation of oxygen vacanciy-type defects. There are also experiments aimed at controlling the MSPT by alteration of the electron beam intensity, due to direct heating the interaction region.…”

Section: Introductionmentioning

confidence: 99%

Electron-beam modification and electrical property recovery dynamics of vanadium dioxide films in semiconducting and metallic phases

Belyaev

Velichko

Khanin

et al. 2015

Jpn. J. Appl. Phys.

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In this paper we investigate electron-beam modification and the process of subsequent recovery of phase transition parameters of VO 2 -based films within 20-100°C temperature range. It is shown that the level of electron-beam modification, i.e., resistance change value, is by an order of magnitude higher in VO 2 metallic phase compared with the semiconducting one. The time of parameter recovery in air also changes at phase transition (less than a minute for the metallic phase and more than an hour for the semiconducting one), while within each phase the temperature dependence of modification rate and recovery is negligible. The physics of the phenomena is explained by peculiarities of the processes of oxygen vacancies generation and recombination in both phases. The regularities of electron-beam modification influence on the electrical switching effect are established; particularly, the threshold voltage of switching device is found to decrease under the action of modification. Fig. 4. Kinetics of oxide film growth. Jpn. J. Appl. Phys. 54, 051102 (2015) M. A. Belyaev et al. 051102-4

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Hydrogen Diffusion and Stabilization in Single-Crystal VO₂ Micro/Nanobeams by Direct Atomic Hydrogenation

Cited by 69 publications

References 40 publications

Modification of the Properties of Vanadium Oxide Thin Films by Plasma-Immersion Ion Implantation

Modification of the Properties of Vanadium Oxide Thin Films by Plasma-Immersion Ion Implantation

Visualization of one-dimensional diffusion and spontaneous segregation of hydrogen in single crystals of VO₂

Electron-beam modification and electrical property recovery dynamics of vanadium dioxide films in semiconducting and metallic phases

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Hydrogen Diffusion and Stabilization in Single-Crystal VO2 Micro/Nanobeams by Direct Atomic Hydrogenation

Cited by 69 publications

References 40 publications

Modification of the Properties of Vanadium Oxide Thin Films by Plasma-Immersion Ion Implantation

Modification of the Properties of Vanadium Oxide Thin Films by Plasma-Immersion Ion Implantation

Visualization of one-dimensional diffusion and spontaneous segregation of hydrogen in single crystals of VO2

Electron-beam modification and electrical property recovery dynamics of vanadium dioxide films in semiconducting and metallic phases

Contact Info

Product

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Hydrogen Diffusion and Stabilization in Single-Crystal VO₂ Micro/Nanobeams by Direct Atomic Hydrogenation

Visualization of one-dimensional diffusion and spontaneous segregation of hydrogen in single crystals of VO₂