2020
DOI: 10.1002/adma.202004059
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Hydrogen‐Doping‐Induced Metal‐Like Ultrahigh Free‐Carrier Concentration in Metal‐Oxide Material for Giant and Tunable Plasmon Resonance

Abstract: The practical utilization of plasmon‐based technology relies on the ability to find high‐performance plasmonic materials other than noble metals. A key scientific challenge is to significantly increase the intrinsically low concentration of free carriers in metal‐oxide materials. Here, a novel electron–proton co‐doping strategy is developed to achieve uniform hydrogen doping in metal‐oxide MoO3 at mild conditions, which creates a metal‐like ultrahigh free‐carrier concentration approaching that of noble metals … Show more

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Cited by 68 publications
(62 citation statements)
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“…The minor errors are possibly caused by the ambiguous infrared permittivity of H x MoO 3 by referring to the literature. [ 41,42 ]…”
Section: Resultsmentioning
confidence: 99%
“…The minor errors are possibly caused by the ambiguous infrared permittivity of H x MoO 3 by referring to the literature. [ 41,42 ]…”
Section: Resultsmentioning
confidence: 99%
“…It is also possible that a portion of hot electrons is contributed to the direct catalysis due to the relatively long hot charge carrier lifetimes in degenerate semiconductors. [ 49 ]…”
Section: Resultsmentioning
confidence: 99%
“…It has been discovered to possess strong enhancement of selected Raman-active modes of adsorbed molecules, correlated to the red shift of absorption. [20][21][22][23][24] Different electronic mechanisms involving TiO 2 -to-molecule CT show results with significantly larger enhancement factors. Notably, the high photocatalytic effect of TiO 2 can realize the substrate UV self-cleaning and recyclable use.…”
Section: Introductionmentioning
confidence: 99%