Hydrogen Effusion Experiments

Beyer, W.; Einsele, Florian

doi:10.1002/9783527699025.ch20

Cited by 8 publications

(7 citation statements)

References 38 publications

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“…In hydrogenated material, the total hydrogen content defines whether the material contains a compact or a void‐rich structure. Therefore, there is a link between the variation of effusion curves between the two groups and the change in density and microstructure of the layers . A detailed study of the microstructure of layers deposited at equal deposition conditions was published by Steffens et al Therein, FTIR measurements were utilized to determine the hydrogen bond configurations and in turn the microstructure factor R .…”

Section: Resultsmentioning

confidence: 99%

“…The total effused hydrogen content is equal to the integrated hydrogen partial pressure over the time interval, measured by the quadrupole analyzer. [ 19 ] The peak positions observed in the hydrogen effusion spectra and the mean values for the integrated area under the effusion spectrum A (H,Eff) , which is proportional to the hydrogen concentration C H , are shown in Table 2 . The values of A (H,Eff) show a reduction of roughly 50% in the hydrogen effusion rate from A1 to A6 (Table 2).…”

Section: Resultsmentioning

confidence: 99%

“…Therefore, there is a link between the variation of effusion curves between the two groups and the change in density and microstructure of the layers. [ 19,20 ] A detailed study of the microstructure of layers deposited at equal deposition conditions was published by Steffens et al [ 21 ] Therein, FTIR measurements were utilized to determine the hydrogen bond configurations and in turn the microstructure factor R . [ 22 ] This quantity has a value between 0 and 1, where lower values correspond to a more ordered and denser microstructure and larger values to a less ordered and loose structure.…”

Section: Resultsmentioning

confidence: 99%

“…The influence of the annealing treatment T a on the surface before and after the hydrogen effusion measurements was monitored by optical microscopy. The setup in Figure is a simplified version of the apparatus illustrated in Figure 17.1 in the study by Beyer and Einsele …”

Section: Hydrogen Effusion Mass Spectroscopymentioning

confidence: 99%

“…The setup in Figure 1 is a simplified version of the apparatus illustrated in Figure 17.1 in the study by Beyer and Einsele. [ 19 ]…”

Section: Hydrogen Effusion Mass Spectroscopymentioning

confidence: 99%

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Occurrence of Sharp Hydrogen Effusion Peaks of Hydrogenated Amorphous Silicon Film and Its Connection to Void Structures

Jafari

Steffens

Wendt

et al. 2020

Physica Status Solidi (b)

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The amount of hydrogen released from plasma‐enhanced chemical vapor (PECVD) deposited hydrogenated amorphous silicon (a‐Si:H) layers is determined by gas effusion measurements. A sharp peak (SP) is observed in the effusion spectra of samples with substrate temperature TS ≥ 200 °C. Light microscopic images indicate the formation of bubbles after deposition for all samples and film deterioration after effusion measurement in correlation with the presence of the hydrogen SPs. Change in substrate temperature varies with the microstructure of the film, the hydrogen concentration, and the density. A low TS leads to a porous structure with large number of interface bubbles, and therefore no hydrogen‐induced SP appears during hydrogen effusion. Whereas high TS causes a compact a‐Si:H film in which the hydrogen effusion is limited by the longer diffusion, while the number of interface bubbles decreases. The storage of near substrate hydrogen in the bubbles in compact material leads to a local explosion by increase in excessive pressure. The difference between the low temperature peak and the position of the SP in the effusion spectra indicates the time required to fill the interface bubbles with hydrogen, which decreases with increasing film density, suggesting that the volume of the interface bubble decreases.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Hydrogen Effusion Mass Spectroscopymentioning

confidence: 99%

“…The setup in Figure 1 is a simplified version of the apparatus illustrated in Figure 17.1 in the study by Beyer and Einsele. [ 19 ]…”

Section: Hydrogen Effusion Mass Spectroscopymentioning

confidence: 99%

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Occurrence of Sharp Hydrogen Effusion Peaks of Hydrogenated Amorphous Silicon Film and Its Connection to Void Structures

Jafari

Steffens

Wendt

et al. 2020

Physica Status Solidi (b)

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Impact of Laser Treatment on Hydrogenated Amorphous Silicon Properties

et al. 2020

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Herein, the application of laser radiation to locally modify the hydrogen distribution within hydrogenated amorphous silicon films on a short time scale is studied. The impact of laser power and irradiation time on the temperature of the silicon layer during the laser treatment and the hydrogen outdiffusion is analyzed. Moreover, the resulting optoelectronic properties of the amorphous silicon are examined. On a timescale of a few seconds or less, the hydrogen concentration in the near‐surface region of the silicon layer can be successfully decreased without major impact on the optoelectronic properties.

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Investigation of Thermal Stability Effects of Thick Hydrogenated Amorphous Silicon Precursor Layers for Liquid‐Phase Crystallized Silicon

Bosan

Beyer

Breuer

et al. 2021

Physica Status Solidi (a)

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The thermal stability of thick (≈4 μm) plasma‐grown hydrogenated amorphous silicon (a‐Si:H) layers on glass upon application of a rather rapid annealing step is investigated. Such films are of interest as precursor layers for laser liquid‐phase crystallized silicon solar cells. However, at least half‐day annealing at T ≈550 °C is considered to be necessary so far to reduce the hydrogen (H) content and thus avoid blistering and peeling during the crystallization process due to H. By varying the deposition conditions of a‐Si:H, layers of rather different thermal stability are fabricated. Changes in the surface morphology of these a‐Si:H layers are investigated using scanning electron microscopy and profilometry measurements. Hydrogen effusion, secondary‐ion mass spectrometry (SIMS) depth profiling, and Raman spectroscopy measurements are also carried out. In summary, amorphous silicon precursor layers are fabricated that can be heated within 30 min to a temperature of 550 °C without peeling and major surface morphological changes. Successful laser liquid‐phase crystallization of such material is demonstrated. The physical nature of a‐Si:H material stability/instability upon application of rapid heating is studied.

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Hydrogen Effusion Experiments

Cited by 8 publications

References 38 publications

Occurrence of Sharp Hydrogen Effusion Peaks of Hydrogenated Amorphous Silicon Film and Its Connection to Void Structures

Occurrence of Sharp Hydrogen Effusion Peaks of Hydrogenated Amorphous Silicon Film and Its Connection to Void Structures

Impact of Laser Treatment on Hydrogenated Amorphous Silicon Properties

Investigation of Thermal Stability Effects of Thick Hydrogenated Amorphous Silicon Precursor Layers for Liquid‐Phase Crystallized Silicon

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