Hydrogen-free PECVD growth of few-layer graphene on an ultra-thin nickel film at the threshold dissolution temperature

Peng, K.C; Wu, Chung‐Chih; Lin, Gong‐Ru; Liu, Yen-Ju; Tsai, Din Ping; Pai, Yi‐Hao

doi:10.1039/c3tc30332b

Cited by 77 publications

(72 citation statements)

References 49 publications

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“…4B shows the I-V characteristic of the graphene film deposited on quartz substrate. The measured sheet resistance is approximately 10.1k/sq which is comparable to reported values of multilayer CVD graphene, and is higher than the reported sheet resistance values of exfoliated graphene and reduced GO films [5,10].…”

Section: Experimental Methodssupporting

confidence: 79%

“…Chemical vapour deposition (CVD) from hydrocarbon precursors deposited on metals catalyst like nickel (Ni) or copper (Cu) is so far the most promising technique for large-area graphene growth [3,4]. Ni which forms a buffer layer for graphene growth has an advantage over Cu because the graphene can be grown at lower temperature [5]. PECVD is alternatively used to enhance graphene growth rate at relatively lower temperatures [6].…”

Section: Introductionmentioning

confidence: 99%

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Low-temperature plasma-enhanced chemical vapour deposition of transfer-free graphene thin films

et al. 2015

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Section: Experimental Methodssupporting

confidence: 79%

Section: Introductionmentioning

confidence: 99%

Low-temperature plasma-enhanced chemical vapour deposition of transfer-free graphene thin films

et al. 2015

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“…Subsequently, these buried carbon atoms are desorbed to the Ni surface by gradually cooling the Ni film to a temperature below the phase transition point. Compared to the Cu film, the slow reduction of few-layer graphene on Ni film can be obtained under hydrogen-free conditions at a relatively low temperature [22]. In addition, the lattice constant of graphene (0.246 nm) is very close to the lattice constant of hexagonally close-packed Ni (0.249 nm).…”

Section: Methodsmentioning

confidence: 70%

“…Moreover, the peak ratio between D and G bands also provides the information of structural defects within the graphene layer [22]. Vacancy and distortion defects could be formed in graphene during its synthesis upon the ultrathin Ni film without hydrogen passivation; however, carbon atoms dissolved into and desorbed from the Ni film can be regularly reduced to graphene with slowly and smoothly cooling down the substrate temperature below the phase transition point.…”

Section: Resultsmentioning

confidence: 99%

“…The active gases inserted into the PECVD chamber were methane and argon with a flow rate of 3 and 200 sccm, respectively. A relatively low gas ratio of methane to argon contributes to the slow-rate carbon precipitation, which facilitates the well control of graphene layer number [22]. Such a temperature is below the melting point of glass, which would induce limited imperfections during the growth of few-layer graphene.…”

Section: Methodsmentioning

confidence: 99%

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Saturated evanescent-wave absorption of few-layer graphene-covered side-polished single-mode fiber for all-optical switching

Peng

Lin

et al. 2017

Nanophotonics

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Using the evanescent-wave saturation effect of hydrogen-free low-temperature synthesized few-layer graphene covered on the cladding region of a side-polished single-mode fiber, a blue pump/infrared probe-based all-optical switch is demonstrated with specific wavelength-dependent probe modulation efficiency. Under the illumination of a blue laser diode at 405 nm, the fewlayer graphene exhibits cross-gain modulation at different wavelengths covering the C-and L-bands. At a probe power of 0.5 mW, the L-band switching throughput power variant of 16 μW results in a probe modulation depth of 3.2%. Blue shifting the probe wavelength from 1580 to 1520 nm further enlarges the switching throughput power variant to 24 mW and enhances the probe modulation depth to 5%. Enlarging the probe power from 0.5 to 1 mW further enlarges the switching throughput power variant from 25 to 58 μW to promote its probe modulation depth of up to 5.8% at 1520 nm. In contrast, the probe modulation depth degrades from 5.1% to 1.2% as the pumping power reduces from 85 to 24 mW, which is attributed to the saturable absorption of the few-layer graphene-based evanescent-wave absorber. The modulation depth at wavelength of 1550 nm under a probe power of 1 mW increases from 1.2% to 5.1%, as more carriers can be excited when increasing the blue laser power from 24 to 85 mW, whereas it decreases from 5.1% to 3.3% by increasing the input probe power from 1 to 2 mW to show an easier saturated condition at longer wavelength.

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Toward Mass Production of CVD Graphene Films

2018

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Chemical vapor deposition (CVD) is considered to be an efficient method for fabricating large‐area and high‐quality graphene films due to its excellent controllability and scalability. Great efforts have been made to control the growth of graphene to achieve large domain sizes, uniform layers, fast growth, and low synthesis temperatures. Some attempts have been made by both the scientific community and startup companies to mass produce graphene films; however, there is a large difference in the quality of graphene synthesized on a laboratory scale and an industrial scale. Here, recent progress toward the mass production of CVD graphene films is summarized, including the manufacturing process, equipment, and critical process parameters. Moreover, the large‐scale homogeneity of graphene films and fast characterization methods are also discussed, which are crucial for quality control in mass production.

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Hydrogen-free PECVD growth of few-layer graphene on an ultra-thin nickel film at the threshold dissolution temperature

Cited by 77 publications

References 49 publications

Low-temperature plasma-enhanced chemical vapour deposition of transfer-free graphene thin films

Low-temperature plasma-enhanced chemical vapour deposition of transfer-free graphene thin films

Saturated evanescent-wave absorption of few-layer graphene-covered side-polished single-mode fiber for all-optical switching

Toward Mass Production of CVD Graphene Films

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