Hydrogen in Crystalline Semiconductors

Pearton, S. J.; Corbett, J. W.; Shi, Tiansheng

doi:10.1007/978-3-642-84778-3

Cited by 624 publications

(387 citation statements)

References 176 publications

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“…In the limit of low temperature, an acceptor-H complex reveals a single IR absorption line associated with a stretch LVM of the Si-H bond. At elevated temperatures a side-band shifted downwards in energy from the main line appears in the spectra [14]. Uniaxial stress also results in a side-band due to the coupling of the main mode with the thermally populated excited state [15].…”

Section: Discussionmentioning

confidence: 97%

“…Uniaxial stress also results in a side-band due to the coupling of the main mode with the thermally populated excited state [15]. The activation energies of the side-bands are in the range of 60-180 cm 1 -and seem to depend on the hydrogen isotope approximately as 1 m / [14,16]. There have been several suggestions for the microscopic origin of the low-energy side-bands with no clear preference to any of the possibilities [14].…”

Section: Discussionmentioning

confidence: 99%

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Uniaxial stress study of the Cu–H complex in ZnO

Lavrov

Weber

2006

Physica Status Solidi (b)

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The influence of uniaxial stress on the vibrational mode of the Cu -H complex at 3192 cm -1 in ZnO is studied. It is shown that the split patterns are consistent with the stretching mode of a bond-centered hydrogen located in the basal plane between substitutional Cu and O. Quantitative analysis of the stress effects reveals two low energy modes with frequencies of 25 and 49 cm -1 . Upon substituting deuterium for hydrogen they shift to 22 and 36 cm -1 , respectively. The origin of the low energy modes is discussed.

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Section: Discussionmentioning

confidence: 97%

Section: Discussionmentioning

confidence: 99%

Uniaxial stress study of the Cu–H complex in ZnO

Lavrov

Weber

2006

Physica Status Solidi (b)

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“…͑3͒ would predict. 29,52 Therefore, it becomes important to obtain data for the indiffusion depth of H that are valid for specific hydrogenation conditions. To help put the values for the diffusivity obtained in the present study in context, experimental results obtained for the diffusivity of H are summarized in Fig.…”

Section: Diffusivity Of H During Hydrogenation Treatmentsmentioning

confidence: 99%

Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells

Kleekajai

Jiang

Stavola

et al. 2006

Journal of Applied Physics

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The hydrogenation of crystalline Si by methods used to passivate defects in Si solar cells has been studied by infrared spectroscopy. For these experiments, floating-zone Si that contained Pt impurities that act as traps for H was used as a model system in which H could be directly detected. In this model system, the concentration and indiffusion depth of H were determined for different hydrogenation treatments so that their effectiveness could be compared. The postdeposition annealing of a hydrogen-rich SiN x surface layer was found to introduce H into the Si bulk with a concentration of ϳ10 15 cm −3 under the best conditions investigated here.

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“…The obtained D H (cm 2 /s) are 2.1*10 -11 for 110 °C, 2.4*10 -11 for 130 °C, and 1.5*10 -10 for 150 °C. Taking account of the large experimental error, these are moderate value compared to the previous reported diffusion coefficient of hydrogen [13]. These results clearly show that the defect formation is attributed to the hydrogen atoms introduced from the bevel surface.…”

Section: Resultsmentioning

confidence: 43%

Formation of low-resistivity region in p-Si substrate of SiGe/Si episystem by remote-hydrogen plasma treatment

Yamashita

Sakamoto

Kamiura

et al. 2007

Physica B: Condensed Matter

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We have studied effects of hydrogen treatment on the resistivity profile of the SiGe/Si episystem by spreading resistance (SR) method. In this paper, we present experimental findings that hydrogen treatment reduces the resistivity at a specific part in the Si substrate region. This position was confirmed to be under the interface between SiGe and Si that emerged on the bevel surface during hydrogen treatment. We investigated the depth of resistivity-reduced regions which was formed by various hydrogenating conditions and found that the region was extended to the same depth as the penetration depth of hydrogen. We concluded that the low-resistivity region was formed under the influence of hydrogen introduced from bevel surface. We attributed this resistivity reduction to formation of some defects which originally existed at the interface and diffused into Si substrate with hydrogen.

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Hydrogen in Crystalline Semiconductors

Abstract: The use of general descriptive names, registered names, trademarks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use.

Cited by 624 publications

References 176 publications

Uniaxial stress study of the Cu–H complex in ZnO

Uniaxial stress study of the Cu–H complex in ZnO

Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells

Formation of low-resistivity region in p-Si substrate of SiGe/Si episystem by remote-hydrogen plasma treatment

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