Hydrogen in phosphorus- and carbon-doped crystalline silicon

Endrös, A.L.; Krühler, W.; Grabmaier, J. G.

doi:10.1016/0921-4526(91)90148-8

Cited by 21 publications

(11 citation statements)

References 17 publications

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“…tion rates of P-H pairs. 36,37 In contrast to p-type material ͑compare Fig. 1͒ we do not observe a drift of the released hydrogen to the end of the space-charge region during annealing.…”

Section: Net Donor Profilescontrasting

confidence: 54%

“…This agrees with previous studies of lightly phosphorus doped silicon. 37 The behavior in Pt-doped samples is different. Directly after etching a reduction in the net donor density is observed as in the reference sample ͓Fig.…”

Section: Net Donor Profilesmentioning

confidence: 99%

“…The heat treatment at 400 K results in an inward shift of the net donor profile as already discussed above. No free hydrogen is left in the samples after 30 min at 400 K. The phosphorus-hydrogen pairs are fully dissociated 36,37 and most of the hydrogen is probably either complexed with platinum or lost as inert H 2 . 39 Additional annealing at temperatures below approximately 470 K results in no further change of the CV profiles ͑not shown͒.…”

Section: Annealing Behavior Of Platinum-hydrogen-related Complexesmentioning

confidence: 99%

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Electrical properties of platinum-hydrogen complexes in silicon

et al. 1997

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The interaction between hydrogen and platinum is studied in n-and p-type silicon using deep-level transient spectroscopy. Hydrogen is introduced by wet-chemical etching or during crystal growth. In both cases we find that hydrogen forms only electrically active complexes with platinum. Four platinum-hydrogen related deep levels are identified: E͑90͒ at E C Ϫ0.18 eV, E͑250͒ at E C Ϫ0.50 eV, H͑150͒ at E V ϩ0.30 eV, and H͑210͒ at E V ϩ0.40 eV. These levels belong to at least three different platinum-hydrogen complexes. Level E͑250͒ is identical to the so-called midgap level in Pt-doped Si, which is believed to control the minority-carrier lifetime in Pt-doped silicon. Level H͑150͒ is an acceptor and is present both in n-and p-type samples after hydrogenation. It belongs to a platinum-hydrogen complex which contains more hydrogen atoms than the complexes responsible for the other hydrogen-related levels. Annealing at temperatures above 600 K results in a complete dissociation of all the platinum-hydrogen related defects and the substitutional platinum concentration is fully restored.

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“…tion rates of P-H pairs. 36,37 In contrast to p-type material ͑compare Fig. 1͒ we do not observe a drift of the released hydrogen to the end of the space-charge region during annealing.…”

Section: Net Donor Profilescontrasting

confidence: 54%

Section: Net Donor Profilesmentioning

confidence: 99%

Section: Annealing Behavior Of Platinum-hydrogen-related Complexesmentioning

confidence: 99%

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Electrical properties of platinum-hydrogen complexes in silicon

et al. 1997

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“…This decreased the deep level concentration compared with that of the phosphorus to prevent complications in the analysis. However, this etchant injects hydrogen into the wafer, 18 so in the surface region P-H complexes will form. These can be removed by an anneal at about 150°C, during which time the hydrogen in the P-H complexes is removed and is able to form gold-hydrogen complexes in the near-surface region.…”

Section: Methodsmentioning

confidence: 99%

High resolution minority carrier transient spectroscopy of Si/SiGe/Si quantum wells

Gad¹,

Evans–Freeman²

2002

Journal of Applied Physics

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We have developed a high resolution technique for examining minority carrier emission from defect states in semiconductors called Laplace minority carrier transient spectroscopy (LMCTS). The experiment uses the same analytical approach to the capacitance transient as Laplace deep level transient spectroscopy (LDLTS), but minority carriers are injected into the depletion region by application of a suitable light pulse. The combination of LDLTS and LMCTS means that detailed emission properties of closely spaced majority and minority carrier traps across the whole band gap can be now characterized. The technique has been used to study minority carrier traps in gas source molecular beam epitaxy-grown Si/Si0.86Ge0.14 strained quantum wells. Initially the technique was evaluated by comparing LMCTS of a hole trap associated with the gold–hydrogen complex in n-type silicon with LDLTS of the same trap in p-type silicon. Both techniques confirm that this level consists of two states, as previously suggested in the literature. LMCTS was then applied to an n-type multiquantum well Si/SiGe layer. We have been able to measure directly the emission rate of holes out of SiGe quantum wells using LMCTS. The emission rate exhibited only slight temperature dependence, in strong contrast to that of holes which are thermally emitted from isolated point defects. We show that in the particular case of LMCTS, a temperature invariant emission rate out of quantum wells is to be expected, and this is consistent with theoretical predictions.

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“…For the cleaved sample, we observe a flat profile, while a significant reduction of the net active phosphorus concentration is observed after etching in the region close to the surface ͑at depths р4 m). The reduction is caused by the formation of passive phosphorus hydrogen pairs 36,37 . The profile of the etched sample after annealing at 430 K for 1 h is identical to the profile of the cleaved sample.…”

Section: Depth Profiles and Annealing Behavior Of Pdh Complexesmentioning

confidence: 99%

Deep-level transient spectroscopy of Pd-H complexes in silicon

2000

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The interaction of atomic hydrogen with substitutional palladium impurities is studied in n-and p-type Si by deep-level transient spectroscopy. After wet-chemical etching, we determine seven different electrically active and at least one passive palladium hydrogen complex. The levels belong to Pd complexes with different number of hydrogen atoms. The PdH 1 complex exhibits one level E(200) at E C Ϫ0.43 eV. PdH 2 has two levels E(60) at E C Ϫ0.10 eV and H͑280͒ at E V ϩ0.55 eV. Four levels are assigned to the PdH 3 complex E(160) at E C Ϫ0.29 eV, H͑140͒ at E V ϩ0.23 eV, H͑55͒ at E V ϩ0.08 eV, and H͑45͒ at E V ϩ0.07 eV. An electrically passive complex is associated with a PdH 4 complex. There is great similarity with the correspondent complexes in Pt-doped Si. Annealing above 650 K destroys all hydrogen related complexes and restores the original substitutional Pd concentration.

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Hydrogen in phosphorus- and carbon-doped crystalline silicon

Cited by 21 publications

References 17 publications

Electrical properties of platinum-hydrogen complexes in silicon

Electrical properties of platinum-hydrogen complexes in silicon

High resolution minority carrier transient spectroscopy of Si/SiGe/Si quantum wells

Deep-level transient spectroscopy of Pd-H complexes in silicon

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