Hydrogen-induced blistering of Mo/Si multilayers: Uptake and distribution

Kuznetsov, Alexey; Gleeson, M.A.; Bijkerk, Frederik

doi:10.1016/j.tsf.2013.07.039

Cited by 16 publications

(13 citation statements)

References 61 publications

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“…The Mo/Si ML samples investigated in this work are similar to those studied previously [23][24][25][26] . They were deposited on a super-polished Si wafer by magnetron sputtering with additional ion polishing of the deposited Si layers.…”

Section: Methodssupporting

confidence: 64%

“…These samples are composed of alternating layers of nanometer thick amorphous Si (a-Si) and polycrystalline Mo with mixed Mo-Si interfacial regions 22 . They are susceptible to two distinct hydrogen-induced blistering processes [23][24][25][26] , which are attributed to the formation of H2-filled blisters and to the formation and clustering of hydrogen-vacancy complexes producing void blister 24 . The former occurs under the influence of thermal H-atom irradiation; the latter process is observed when energetic (100's of eV) ions are present in the irradiating flux.…”

Section: Introductionmentioning

confidence: 99%

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Temperature dependencies of hydrogen-induced blistering of thin film multilayers

Kuznetsov

Gleeson

Bijkerk

2014

Journal of Applied Physics

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We report on the influence of sample temperature on the development of hydrogen-induced blisters in Mo/Si thin-film multilayers. In general, the areal number density of blisters decreases with increasing exposure temperature, whereas individual blister size increases with exposure temperatures up to ~200 °C but decreases thereafter. Comparison as a function of sample temperature is made between exposures to a flux containing both hydrogen ions and neutrals and one containing only neutrals. In the case of the neutral-only flux, blistering is observed for exposure temperatures ≥90 °C. The inclusion of ions promotes blister formation at <90 °C, while retarding their growth at higher temperatures. In general, ioninduced effects become less evident with increasing exposure temperature. At 200 °C the main effect discernable is reduced blister size as compared with the equivalent neutral-only exposure. The temperature during exposure is a much stronger determinant of the blistering outcome than either pre-or post-annealing of the sample. The trends observed for neutralonly exposures are attributed to competing effects of defect density thermal equilibration and H-atom induced modification of the Si layers. Energetic ions modify the blistering via (temperature dependent) enhancement of H-mobility and re-crystallization of amorphous Si.

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Section: Methodssupporting

confidence: 64%

Section: Introductionmentioning

confidence: 99%

Temperature dependencies of hydrogen-induced blistering of thin film multilayers

Kuznetsov

Gleeson

Bijkerk

2014

Journal of Applied Physics

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“…The current work expands on earlier reports [26,54,55] by focusing on the specific roles that energetic ions play in inducing and modifying blistering of Mo/Si MLs. These ions are an incidental consequence of the mode of operation of the particle source and have energies in the 800-1000 eV range.…”

Section: Incorporation Of Additional Atoms Resulted In H 2 Formationmentioning

confidence: 69%

“…The ability of defects introduced in materials by ion irradiation to accumulate hydrogen is well-established. However, while induced defects and implantation will occur across the entire region probed by the penetrating ions, blister formation remains localized in the vicinity of the Mo-on-Si interfaces [26,54]. Thus local structural properties are the determining factor in blister manifestation, with the Mo-on-Si interface clearly providing the preferred nucleation sites.…”

Section: The Appearance Of the "Ion-induced" Distributionmentioning

confidence: 99%

Ion effects in hydrogen-induced blistering of Mo/Si multilayers

Kuznetsov

Gleeson

Bijkerk

2013

Journal of Applied Physics

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The role that energetic (>800 eV) hydrogen ions play in inducing and modifying the formation of blisters in nanoscale Mo/Si multilayer samples is investigated. Such samples are confirmed to be susceptible to blistering by two separate mechanisms. The first is attributed to the segregation of H atoms to voids and vacancies associated with the outermost Mo layer, driving blister formation in the form of H 2 filled bubbles. This process can occur in the absence of ions. A second blister distribution emerges when energetic ions are present in the irradiating flux. This is attributed to an ion-induced vacancy clustering mechanism that produces void blisters. The defects and strained states associated with the Moon -Si interfaces provide the preferred nucleation points for blistering in both cases. The effects of ions are ascribed to promotion of hydrogen uptake and mobility, in particular through the Si layers; to the generation of additional mobile species in the Si and Mo layers; and to the creation of new blister nucleation points. In addition to directly stimulating blistering via vacancy clustering, ions modify the development of H 2-filled blisters. This is most evident in the formation of multi-component structures due to overlapping delaminations at different layer interfaces. This affect is attributed to the introduction of active transport of hydrogen from the H 2 filled blisters across the outermost Moon -Si interface to the underlying layers. Ion-induced variations in hydrogen uptake and distribution and in the rates of blister nucleation and growth produce lateral differences in blister size and areal number density that create a macroscopic concentric pattern across the surface.

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“…Similar results were reported also in Refs. [132,133]. However, these effects seem to be dependent on the material used for the capping-layer: in this experiment, all the Ir-capped ML showed a smaller reflectance loss and a shorter peak shift than the structures with other capping-layers.…”

Section: Stability To Accelerated Ions Implantationmentioning

confidence: 62%

Extreme Ultraviolet Multilayer Nanostructures and Their Application to Solar Plasma Observations: A Review

Corso

Pelizzo

2019

j nanosci nanotechnol

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The advent of nanoscale multilayer (ML) technology has led to great breakthroughs in many scientific and technological fields such as nano-manufacturing, bio-imaging, atto-physics, matter physics and solar physics. ML nanostructures are an enabling technology for the development of mirrors and reflective gratings having high efficiency at normal incidence in the extreme ultraviolet (EUV) range, a spectral region where conventional coatings show a negligible reflectance. In solar physics, ML mirrors have proved to be key elements for both imaging and spectroscopy space instruments, as they allow to make observations of EUV solar plasma emissions with spatial and spectral resolutions never reached before. ML-based instruments have been used in many of the major solar satellites and have flown in numerous sounding rocket experiments; moreover, in the last two decades many studies were performed in order to develop ML structures with increasingly better performance for future solar missions. In this paper, a review of the most promising ML nanostructures developed so far and applied to the observation of solar plasma emission lines is presented. After a brief recall of ML theory, a detailed discussion of the most promising material pairs and layer stack structures proposed and applied to past and current space missions will be presented; in particular, the review will focus on the ML structures having high efficiency in the 6 nm-35 nm wavelength range. Finally, the ML stability to low energy ion bombardment will be discussed.

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Hydrogen-induced blistering of Mo/Si multilayers: Uptake and distribution

Cited by 16 publications

References 61 publications

Temperature dependencies of hydrogen-induced blistering of thin film multilayers

Temperature dependencies of hydrogen-induced blistering of thin film multilayers

Ion effects in hydrogen-induced blistering of Mo/Si multilayers

Extreme Ultraviolet Multilayer Nanostructures and Their Application to Solar Plasma Observations: A Review

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