Hydrogen-induced degradation in SrTiO3-based grain boundary barrier layer ceramic capacitors

Shen, Zj J.; Chen, Wp P.; Zhu, Kai; Zhuang, Yongyong; Hu, Ym M.; Wang, Yu; Chan, H.L.W.

doi:10.1016/j.ceramint.2008.04.005

Cited by 14 publications

(4 citation statements)

References 7 publications

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“…Hydrogen changes the properties of a wide variety of oxides; for example, hydrogen chemically reacts 1.17 0.68 with oxygen adsorbed onto the surface of metal-oxide semiconductors such as SnO 2 and ZnO, changing their resistance; such materials are used for hydrogen sensors. 25) Another example is that hydrogen changes the properties of oxide-based dielectric materials such as TiO 2 , 26) Ta 2 O 5 , 27) HfO 2 , 28) Pb(Zr,Ti)O 3 , 29) SrBi 2 Ta 2 O 9 , 30) SrTiO 3 , 31) and BaTiO 3 , 32) confirming that hydrogen clearly lowers the resistance of most of these materials, consistent with the results in Table III. The proposed mechanism for oxide resistance reduction is as follows: 29,31) hydrogen atoms are ionized in the oxide materials, producing protons and free electrons.…”

supporting

confidence: 70%

“…25) Another example is that hydrogen changes the properties of oxide-based dielectric materials such as TiO 2 , 26) Ta 2 O 5 , 27) HfO 2 , 28) Pb(Zr,Ti)O 3 , 29) SrBi 2 Ta 2 O 9 , 30) SrTiO 3 , 31) and BaTiO 3 , 32) confirming that hydrogen clearly lowers the resistance of most of these materials, consistent with the results in Table III. The proposed mechanism for oxide resistance reduction is as follows: 29,31) hydrogen atoms are ionized in the oxide materials, producing protons and free electrons. These protons bond to oxygen atoms and can be mobile in the oxide materials.…”

supporting

confidence: 70%

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Effect of hydrogen on Pt/GaN Schottky diodes

Irokawa¹

2020

Jpn. J. Appl. Phys.

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The effect of hydrogen on Pt/GaN Schottky diodes was studied using current–voltage (I–V), capacitance–voltage (C–V), and impedance spectroscopy measurements. The results showed that hydrogen exposure reduced the Schottky barrier height and the resistance of the semiconductor space-charge region but did not affect the ideality factor, carrier concentration, or capacitance of the semiconductor space-charge region. Exposure to dry air restored the I–V curves, 1/C2–V curves, and Nyquist plots to the original values more rapidly than exposure to pure N2, suggesting that Pt functioned as a catalyst. Hydrogen-induced changes in the properties of the Pt/GaN interface oxide may be related to these phenomena.

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confidence: 70%

supporting

confidence: 70%

Effect of hydrogen on Pt/GaN Schottky diodes

Irokawa¹

2020

Jpn. J. Appl. Phys.

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“…According to our previous study involving GaN MOS capacitors, 13 oxide layers between Pt and GaN are the most likely origin of the change in the Pt/GaN interface oxide resistance because hydrogen was found to be absorbed into the oxide layers as positive mobile charges. Third, hydrogen-induced property changes in oxides have been reported for various oxides, including TiO 2 , 21 Ta 2 O 5 , 22 HfO 2 , 23 Pb(Zr,Ti)O 3 , 24 SrBi 2 Ta 2 O 9 , 25 SrTiO 3 , 26 and BaTiO 3 ; 27 hydrogen is known to reduce the resistance of these oxides. Hydrogen is ionized in the oxides, and electrons emitted from hydrogen contribute to the lowering of the resistance.…”

Section: Resultsmentioning

confidence: 99%

“…Hydrogen is ionized in the oxides, and electrons emitted from hydrogen contribute to the lowering of the resistance. 24,26,28 We assume that the same phenomenon occurs in the Pt/GaN interface oxide. We subsequently investigated the reaction timeframe of a Pt/GaN SBD under a hydrogen ambient atmosphere.…”

Section: Resultsmentioning

confidence: 99%

Pt/GaN Schottky Barrier Height Lowering by Incorporated Hydrogen

Irokawa,

Ohi,

Nabatame

et al. 2024

ECS J. Solid State Sci. Technol.

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Changes in the hydrogen-induced Schottky barrier height (Φ B) of Pt/GaN rectifiers fabricated on free-standing GaN substrates were investigated using current–voltage, capacitance–voltage, impedance spectroscopy, and current–time measurements. Ambient hydrogen lowered the Φ B and reduced the resistance of the semiconductor space–charge region while only weakly affecting the ideality factor, carrier concentration, and capacitance of the semiconductor space–charge region. The changes in the Φ B were reversible; specifically, the decrease in Φ B upon hydrogen exposure occurred quickly, but the recovery was slow. The results also showed that exposure to dry air and/or the application of a reverse bias to the Schottky electrodes accelerated the reversion compared with the case without the applied bias. The former case resulted in fast reversion because of the catalytic effect of Pt. The latter case, by contrast, suggested that hydrogen was incorporated into the Pt/GaN interface oxides as positive mobile charges. Moreover, both exposure to dry air and the application of a reverse bias increased the Φ B of an as-loaded sample from 0.91 to 1.07 eV, revealing that the Φ B of Pt/GaN rectifiers was kept lower as a result of hydrogen incorporation that likely occurred during device processing and/or storage.

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Sintering and varistor behaviour of SnO2-Zn2SnO4 composite ceramics

Zang

Wang

et al. 2013

J Electroceram

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Hydrogen-induced degradation in SrTiO3-based grain boundary barrier layer ceramic capacitors

Cited by 14 publications

References 7 publications

Effect of hydrogen on Pt/GaN Schottky diodes

Effect of hydrogen on Pt/GaN Schottky diodes

Pt/GaN Schottky Barrier Height Lowering by Incorporated Hydrogen

Sintering and varistor behaviour of SnO2-Zn2SnO4 composite ceramics

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