Hydrogen Induced Metallicity on the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>ZnO</mml:mi><mml:mo stretchy="false">(</mml:mo><mml:mn>10</mml:mn><mml:mover accent="true"><mml:mn>1</mml:mn><mml:mo>¯</mml:mo></mml:mover><mml:mn>0</mml:mn><mml:mo stretchy="false">)</mml:mo></mml:math>Surface

Wang, Y.; Meyer, Bernd; Yin, Xiuli; Kunat, M.; Langenberg, Deler; Traeger, F.; Birkner, Alexander; Wöll, Christof

doi:10.1103/physrevlett.95.266104

Cited by 206 publications

(200 citation statements)

References 24 publications

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“…This was indeed the case for r-TiO 2 , where IR spectra recorded after exposure to atomic H (chemical doping, leading to an n-doping of TiO 2 ) were very similar to those recorded after ultraviolet exposure (photon doping) 16 . Since spectra recorded after n-doping resulting from exposure to D-atoms [18][19][20] (see Supplementary Fig. 3) are clearly different from those recorded after ultraviolet exposure, we therefore regard the effects observed in the IR spectra as evidence for hole polarons.…”

Section: Resultsmentioning

confidence: 99%

Evidence for photogenerated intermediate hole polarons in ZnO

et al. 2015

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Despite their pronounced importance for oxide-based photochemistry, optoelectronics and photovoltaics, only fairly little is known about the polaron lifetimes and binding energies. Polarons represent a crucial intermediate step populated immediately after dissociation of the excitons formed in the primary photoabsorption process. Here we present a novel approach to studying photoexcited polarons in an important photoactive oxide, ZnO, using infrared (IR) reflection-absorption spectroscopy (IRRAS) with a time resolution of 100 ms. For welldefined (10-10) oriented ZnO single-crystal substrates, we observe intense IR absorption bands at around 200 meV exhibiting a pronounced temperature dependence. On the basis of first-principles-based electronic structure calculations, we assign these features to hole polarons of intermediate coupling strength.

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Section: Resultsmentioning

confidence: 99%

Evidence for photogenerated intermediate hole polarons in ZnO

et al. 2015

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“…H + ions) 32 or surface metallization. 35 In all these examples, the stabilization of the polar surface will again result in a substantial modification of the bulk-truncated structure.…”

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confidence: 99%

“…35 Even if tunneling through the oxide material is feasible for one of the given reasons, the tunneling characteristic will follow different rules than on metal samples. 72 In particular, the contribution of inhomogeneous and spatially-varying electronic properties might be larger.…”

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confidence: 99%

Properties of oxide thin films and their adsorption behavior studied by scanning tunneling microscopy and conductance spectroscopy

Nilius

2009

Surface Science Reports

221

233

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The preparation of thin oxide films on metal supports is a versatile approach to explore the properties of oxide materials that are otherwise inaccessible to most surface science techniques due to their insulating nature. Although substantial progress has been made in the characterization of oxide surfaces with spatially averaging techniques, a local view is often essential to provide comprehensive understanding of such systems. The scanning tunneling microscope (STM) is a powerful tool to obtain atomic-scale information on the growth behavior of oxide films, the resulting surface morphology and defect structure.

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“…Additionally, surface metallization induced by hydrogen adsorption has also been reported for ZnO and Ge [10,11].…”

Section: Introductionmentioning

confidence: 88%

Metallization of the β-SiC(100) 3×2 surface: A DFT investigation

et al. 2012

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Using density functional theory (DFT) we report results for the electronic structure and vibrational dynamics of hydrogenated β reconstructed Silicon Carbide (001) (3x2) surfaces with various levels of hydrogenation. These results were obtained using density functional theory with a generalized gradient exchange correlation function. The calculations reveal that metallization can be achieved via hydrogen atoms occupying the second silicon layer. Further increases of hydrogen occupation on the second silicon layer sites result in a loss of this metallization. For the former scenario, where metallization occurs, we found a new vibrational mode at 1870 cm -1 , which is distinct from the mode associated with hydrogen atoms on the first layer. Furthermore, we found the diffusion barrier for a hydrogen atom to move from the second to the third silicon layer to be 258 meV.2

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Hydrogen Induced Metallicity on theZnO(101¯0)Surface

Cited by 206 publications

References 24 publications

Evidence for photogenerated intermediate hole polarons in ZnO

Evidence for photogenerated intermediate hole polarons in ZnO

Properties of oxide thin films and their adsorption behavior studied by scanning tunneling microscopy and conductance spectroscopy

Metallization of the β-SiC(100) 3×2 surface: A DFT investigation

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