“…Charge carrier concentration Semiconductor type Tensile strains developed in the outermost surface before hydrogen evolution, and compressive strains developed when hydrogen was infused (more negative than − 0.9 V) into the microstructure. The strain formation was shown in earlier work to adopt a logarithmic dependence with time [8,12]. The lattice strains increase with time, requiring some time to reach near-equilibrium state.…”