Hydrogen injection and neutralization of boron acceptors in silicon boiled in water

Tavendale, A. J.; Williams, Alan; Pearton, S. J.

doi:10.1063/1.96476

Cited by 85 publications

(23 citation statements)

References 17 publications

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“…[183] Etching may possibly even remove dopants from the surface. [186] This behavior somewhat limits the use of Si as a substrate that allows varying the electrode's work function without changing the surface chemistry.…”

Section: Sources Of Defects and How To Avoid Themmentioning

confidence: 99%

Molecules on Si: Electronics with Chemistry

et al. 2009

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Basic scientific interest in using a semiconducting electrode in molecule‐based electronics arises from the rich electrostatic landscape presented by semiconductor interfaces. Technological interest rests on the promise that combining existing semiconductor (primarily Si) electronics with (mostly organic) molecules will result in a whole that is larger than the sum of its parts. Such a hybrid approach appears presently particularly relevant for sensors and photovoltaics. Semiconductors, especially Si, present an important experimental test‐bed for assessing electronic transport behavior of molecules, because they allow varying the critical interface energetics without, to a first approximation, altering the interfacial chemistry. To investigate semiconductor‐molecule electronics we need reproducible, high‐yield preparations of samples that allow reliable and reproducible data collection. Only in that way can we explore how the molecule/electrode interfaces affect or even dictate charge transport, which may then provide a basis for models with predictive power.To consider these issues and questions we will, in this Progress Report, review junctions based on direct bonding of molecules to oxide‐free Si. describe the possible charge transport mechanisms across such interfaces and evaluate in how far they can be quantified. investigate to what extent imperfections in the monolayer are important for transport across the monolayer. revisit the concept of energy levels in such hybrid systems.

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Section: Sources Of Defects and How To Avoid Themmentioning

confidence: 99%

Molecules on Si: Electronics with Chemistry

et al. 2009

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“…The hydrogen passivation of dopant atoms is a well known phenomenon that is intentionally performed and studied extensively by exposing silicon at temperatures above ϳ100°C to atomic hydrogen created in an H 2 -plasma. 6 By comparison, there are only few reports on hydrogen injection and nearsurface passivation at RT following wet-etching procedures [7][8][9] and all apply to boron compensation with the exception of Ref. 9, which suggests that donor passivation might have been observed in one sample as well.…”

mentioning

confidence: 99%

Surface Fermi level position of hydrogen passivated Si(111) surfaces

Miyazaki

Schäfer

Ristein

et al. 1996

Applied Physics Letters

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Core and valence band photoemission data of hydrogen passivated Si(111):H surfaces yield surface Fermi level positions that are indicative of a near-surface depletion layer for n- as well as p-type samples. The bulk Fermi level positions are attained after annealing at ∼400 °C. These observations are explained in terms of a hydrogen induced passivation of donors and acceptors in a surface layer of the order of a μm as a result of the wet-chemical etching procedure.

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“…The surface Fermi-level position determined by a Kelvin probe method is located at 4.7eV below the vacuum level, namely shifted toward midgap by at least 0.25eV from the bulk Fermi-level. This Fermi-energy shift is mainly attributed to hydrogen-induced passivation of acceptors in the near surface region during the wet-chemical process [5,6]. In fact, after 5min annealing at 350'C the surface Fermi-level shifts close to the bulk position without any change in not only the yield spectrum but also surface hydrogen termination as confirmed by UPS measurements [5].…”

Section: Resultsmentioning

confidence: 58%

Evaluation of Gap States in Hydrogen-Terminated Silicon Surfaces and Ultrathin SiO₂/Si Interfaces by using Photoelectron Yield Spectroscopy

et al. 1997

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The energy distributions of gap state densities for H-terminated Si surfaces and thermallygrown SiO 2 /c-Si interfaces have been evaluated by total photoelectron yield spectroscopy (PYS) with a dynamic range of eight orders of magnitude which is sufficient to detect the density of states as low as 10 10 cm-2 eV-1. It is confirmed from the threshold energies for direct and indirect photoexcitations that, for monohydride-terminated Si(l 11) surfaces prepared by an NH 4 F treatment, no significant band-bending is observable. For H-terminated n-type sample, the gap state densities of the order of 10 11 cm' 2 eV-1 were estimated in the region within 0.4 eV from the valence band edge, which may be attributable to a very little oxidation in the sample preparation. It is also found that, for as-grown 2.5nm-thick SiO 2 /n+ Si, there exist interface states around midgap with densities as high as _ 1012 cm-2 eV-1 . INTRODUCTIONA clear insight into chemical and electronic structures of Si surfaces and SiO 2 /Si interfaces has become increasingly important with the continuing shrinkage of MOS device dimensions. To gain a better understanding of the nature of the surface and interface states, and to control them, precision measurements for the gap state distributions in the surfaces or the interfaces are thought to be crucial. It is well known that hydrogen-terminated, unreconstructed Si surfaces (lxi), which are prepared by a wet-chemical cleaning in a dilute HF or pH-controlled HF solution [ 1, 2], exhibit high chemical stability against oxidation [3] and slow surface recombination [4], in contrast to the hydrogen-free, reconstructed Si surfaces (for example, 7x7 or 2x 1). These observations indicate that the gap state density in the H-terminated surfaces is fairly small. However, the perfectness of the surface passivation or the energy distribution of gap states for H-terminated surfaces has not been well-characterized yet. Even for an ultrathin SiO 2 /Si system, the determination of the energy distribution of interface states is still a matter for research because conventional C-V characterizations are no longer useful under high tunneling current.In this work, we have investigated the energy distributions of gap states for H-terminated Si(100) and (111) surfaces and thermally-grown ultrathin SiO 2 /c-Si interfaces by means of total photoelectron yield spectroscopy (PYS).

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Hydrogen injection and neutralization of boron acceptors in silicon boiled in water

Cited by 85 publications

References 17 publications

Molecules on Si: Electronics with Chemistry

Molecules on Si: Electronics with Chemistry

Surface Fermi level position of hydrogen passivated Si(111) surfaces

Evaluation of Gap States in Hydrogen-Terminated Silicon Surfaces and Ultrathin SiO₂/Si Interfaces by using Photoelectron Yield Spectroscopy

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Hydrogen injection and neutralization of boron acceptors in silicon boiled in water

Cited by 85 publications

References 17 publications

Molecules on Si: Electronics with Chemistry

Molecules on Si: Electronics with Chemistry

Surface Fermi level position of hydrogen passivated Si(111) surfaces

Evaluation of Gap States in Hydrogen-Terminated Silicon Surfaces and Ultrathin SiO2/Si Interfaces by using Photoelectron Yield Spectroscopy

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Product

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Evaluation of Gap States in Hydrogen-Terminated Silicon Surfaces and Ultrathin SiO₂/Si Interfaces by using Photoelectron Yield Spectroscopy