1996
DOI: 10.1103/physrevb.54.17759
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Hydrogen microstructure in hydrogenated amorphous silicon

Abstract: We present a method to determine the local hydrogen bonding structure in hydrogenated amorphous silicon from infrared spectroscopy measurements. This approach is based on a different oscillator strength and refractive index for hydrogen atoms located in the isolated and clustered phase. It is demonstrated that the density of distributed hydrogen atoms does not exceed 3-4 at.%, independent of the deposition conditions for several deposition techniques. We suggest that changes in the infrared-absorption strength… Show more

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Cited by 56 publications
(67 citation statements)
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“…Microstructural properties of hydrogen distributions are examined, and addressed by comparing the results from the models with those from nuclear magnetic resonance [23][24][25][26] and infrared absorption [20][21][22]42 studies.…”
Section: Resultsmentioning
confidence: 99%
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“…Microstructural properties of hydrogen distributions are examined, and addressed by comparing the results from the models with those from nuclear magnetic resonance [23][24][25][26] and infrared absorption [20][21][22]42 studies.…”
Section: Resultsmentioning
confidence: 99%
“…While this particu- lar range may appear to be somewhat empirical, it is motivated by our desire to compare the results with the experimental data from Ref. 42, where the authors obtained an average isolation radius of 5.9Å based on the analysis of their experimental data using phenomenological arguments. Figure 11 presents the results for the percentage of isolated H atoms (with respect to total hydrogen) for two models with 10.6 at.…”
Section: Hydrogen Distribution: Density Of Clustered and Isolated mentioning
confidence: 99%
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