Hydrogen migration in wet-thermally grown silicon dioxide layers due to high dose 15N ion beam irradiation

Maser, K.; Mohr, U.; Leihkauf, R.; Ecker, Klaus; Beck, Uwe; Grambole, D.; Grötzschel, R.; Herrmann, F.; Krauser, J.; Weidinger, A.

doi:10.1016/s0167-9317(99)00356-1

Cited by 5 publications

(1 citation statement)

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“…Note, however, that the H accumulation in the interfacial regions seen in the depth profiles may partially result from the NRA analysis itself, because the 15 N ion irradiation can cause redistribution of hydrogen in the material. This is a well-known effect 35,[38][39][40] and any possible H relocation during the NRA analysis should be verified by measuring the H concentration evolution at the accumulation peak depth on a non-irradiated sample spot in the course of continued 15 N ion irradiation. Although this beam-induced H relocation effect can make determining the original H distribution in a specimen somewhat more difficult, it can be exploited for analytical purposes in dielectric reliability research to evaluate H redistribution trends between intact interfaces of (model) MOS device structures, providing information on relative material-specific H mobilities.…”

Section: Discussionmentioning

confidence: 94%

Quantification of Hydrogen Concentrations in Surface and Interface Layers and Bulk Materials through Depth Profiling with Nuclear Reaction Analysis

Wilde

Ohno

Ogura

et al. 2016

JoVE

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Nuclear reaction analysis (NRA) via the resonant (1)H((15)N,αγ)(12)C reaction is a highly effective method of depth profiling that quantitatively and non-destructively reveals the hydrogen density distribution at surfaces, at interfaces, and in the volume of solid materials with high depth resolution. The technique applies a (15)N ion beam of 6.385 MeV provided by an electrostatic accelerator and specifically detects the (1)H isotope in depths up to about 2 μm from the target surface. Surface H coverages are measured with a sensitivity in the order of ~10(13) cm(-2) (~1% of a typical atomic monolayer density) and H volume concentrations with a detection limit of ~10(18) cm(-3) (~100 at. ppm). The near-surface depth resolution is 2-5 nm for surface-normal (15)N ion incidence onto the target and can be enhanced to values below 1 nm for very flat targets by adopting a surface-grazing incidence geometry. The method is versatile and readily applied to any high vacuum compatible homogeneous material with a smooth surface (no pores). Electrically conductive targets usually tolerate the ion beam irradiation with negligible degradation. Hydrogen quantitation and correct depth analysis require knowledge of the elementary composition (besides hydrogen) and mass density of the target material. Especially in combination with ultra-high vacuum methods for in-situ target preparation and characterization, (1)H((15)N,αγ)(12)C NRA is ideally suited for hydrogen analysis at atomically controlled surfaces and nanostructured interfaces. We exemplarily demonstrate here the application of (15)N NRA at the MALT Tandem accelerator facility of the University of Tokyo to (1) quantitatively measure the surface coverage and the bulk concentration of hydrogen in the near-surface region of a H2 exposed Pd(110) single crystal, and (2) to determine the depth location and layer density of hydrogen near the interfaces of thin SiO2 films on Si(100).

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Section: Discussionmentioning

confidence: 94%