Photoelectrochemical (PEC) water splitting for H 2 production is a possible alternative for fossil energy in the future. However, there exists three problems in PEC water splitting with the silicon (Si) photocathode: poor light absorption of the untreated Si substrate, bad stability in strong acid solution, and poor photocatalytic activity of Si. Here, a strategy of dual interface engineering and photocatalyst deposition is proposed to improve the PEC performance, which consists of fabricating black Si (b-Si) by reactive ion etching, depositing of TiO 2 on the b-Si by atomic layer deposition, and growing ReS 2 on top of the TiO 2 by chemical vapor deposition. Owing to the suitable band alignment of b-Si, TiO 2 , and ReS 2 , the ReS 2 /TiO 2 /b-Si shows obviously enhanced PEC performance compared to b-Si, TiO 2 /b-Si, and ReS 2 /b-Si photocathodes. Results of electrochemical impedance spectroscopy and Mott−Schottky plot analysis demonstrate that the TiO 2 layer plays an important role and the charge-transfer kinetics of the system is clearly improved. Transient photocurrent measurements indicate that the ReS 2 /TiO 2 /b-Si photocathode has the most remarkable photocurrent response. In addition, the ReS 2 /TiO 2 /b-Si photocathode also shows excellent stability after being operated for 25 h.