“…This was supported by further evidence from our other ongoing research with substantial improvements in the lifetimes due to hydrogen passivation on a whole array materials such as n-type, gallium-and boron-doped Cz silicon wafers, as well as multi-crystalline silicon and quasi-mono-crystalline silicon materials. Such improvements have been related to a reduction in recombination activity of impurity related defects, laser-induced defects and crystallographic defects such as sliplines, grain boundaries and dislocation clusters [29,30,[50][51][52]. Many publications from other research groups have reported on the important influence of hydrogen in the generation and passivation of oxygen related defects such as boron-oxygen complexes, thermal donors and vacancy-oxygen complexes [17,28,32,[53][54][55].…”