Hydrogen passivation of dopants in amorphous silicon

Pietruszko, S.M.; Pachocki, Mariusz; Jang, J.

doi:10.1016/0022-3093(95)00661-3

Cited by 8 publications

(10 citation statements)

References 4 publications

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“…SiH 2 -BH 3 (17) and SiH 3 -BH 2 (14), BH 3 Elimination Product of (10) and (13). It can be seen in Figure 3 that compound 10 is a quite unstable intermediate.…”

Section: Resultsmentioning

confidence: 96%

“…D. SiH 2 -B 2 H 6 (10) and SiH 3 -B 2 H 5 (13), the H 2 Elimination Products of 7. Starting from 7, two H 2 elimination processes can occur besides the BH 3 elimination.…”

Section: Resultsmentioning

confidence: 99%

“…Clearly, the species formed from the gas phase is highly dependent on the experimental condition. As the information about the relationship between conditions and solid properties accumulates, − some theoretical mechanisms involving the gas phase and surface are also proposed. − In particular, on the observation that B 2 H 6 can raise the silicon deposition rate to a certain extent in some experiments, , various boron−silicon hydrides are investigated theoretically. − It is not clear, however, what kinds of initial chemical reaction are actually induced between the two source-gas molecules SiH 4 and B 2 H 6 , and no detailed pathways have been traced to the small precursors formed from the original mixtures. In previous works, , we have demonstrated the existence of a hydrogen-bridged SiH 4 −BH 3 complex.…”

Section: Introductionmentioning

confidence: 99%

“…Clearly, the species formed from the gas phase is highly dependent on the experimental condition. As the information about the relationship between conditions and solid properties accumulates, [11][12][13][14][15][16][17][18][19][20][21] some theoretical mechanisms involving the gas phase and surface are also proposed. [22][23][24][25][26][27] In particular, on the observation that B 2 H 6 can raise the silicon deposition rate to a certain extent in some experiments, 28,29 various boron-silicon hydrides are investigated theoretically.…”

Section: Introductionmentioning

confidence: 99%

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Gas Phase Reactions between SiH₄and B₂H₆: A Theoretical Study

Wang

2003

J. Phys. Chem. A

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Gas-phase reactions of silane (SiH 4 ) and diborane (B 2 H 6 ) are investigated using ab initio calculations at the MP2/6-311++g** level. Initially SiH 4 and B 2 H 6 are only weakly attracted to each other. Under thermal activation, the two molecules can overcome an energy barrier of 33.87 kcal/mol to associate into a complex SiH 4 -BH 3 -BH 3 with a hydrogen-bridged Si-H-B bond. Upon bonding, one of the two hydrogen-bridged bonds B-H-B in B 2 H 6 is broken and the other becomes polarized. Started from the SiH 4 -BH 3 -BH 3 complex, three comparable fragmentation pathways involving BH 3 and H 2 elimination produce several silaboranes with various silicon-boron-hydrogen ratios. A much higher barrier exists between the initial loosely bonded SiH 4 -B 2 H 6 system and a direct H 2 elimination product SiH 3 -B 2 H 5 with C s symmetry. The bonding nature in the species are further elucidated through topological analysis of electron density using the AIM theory. These intermediate silaboranes are possible precursors for chemical vapor deposition in fabricating boron doped silicon films. Their composition and polarity may determine their tendency of surface adsorption and the properties of the relevant solid. The proposed mechanisms can help to understand and control the initial gas-phase reactions in practice. Calculated IR spectra, dipole moment, and rotational constants of the species are provided to facilitate experimental investigations.

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“…SiH 2 -BH 3 (17) and SiH 3 -BH 2 (14), BH 3 Elimination Product of (10) and (13). It can be seen in Figure 3 that compound 10 is a quite unstable intermediate.…”

Section: Resultsmentioning

confidence: 96%

“…D. SiH 2 -B 2 H 6 (10) and SiH 3 -B 2 H 5 (13), the H 2 Elimination Products of 7. Starting from 7, two H 2 elimination processes can occur besides the BH 3 elimination.…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…Clearly, the species formed from the gas phase is highly dependent on the experimental condition. As the information about the relationship between conditions and solid properties accumulates, [11][12][13][14][15][16][17][18][19][20][21] some theoretical mechanisms involving the gas phase and surface are also proposed. [22][23][24][25][26][27] In particular, on the observation that B 2 H 6 can raise the silicon deposition rate to a certain extent in some experiments, 28,29 various boron-silicon hydrides are investigated theoretically.…”

Section: Introductionmentioning

confidence: 99%

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Gas Phase Reactions between SiH₄and B₂H₆: A Theoretical Study

Wang

2003

J. Phys. Chem. A

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“…The 2n d post-annealing step improves all properties of the solar cell except the rseries. The high annealing temperature activates the dopants and reduces defect densities in the films [8], [9]. However, during the annealing process, additional defects, such as dangling bonds, can be created in films [10].…”

Section: Methodsmentioning

confidence: 99%

P<sup>+</sup> layer effects on a-Si:H solar cell performance

Kim

Kuo

2014

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)

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Influences of the p + layer, i.e., deposition condition, post-deposition annealing, thin film deposition sequence, internal light reflection, electrode film quality, and SiNx chamber pretreatment on the a-Si:H solar cell performance have been studied. The conversion efficiency is improved using the pin stack structure with a high final annealing temperature and a high reflective bottom electrode due to the decrease of the contact resistance, the reduction of defects in the film, the increase of the hole transport efficiency, the improvement of light absorption, and the minimum cross contamination. The high solar cell efficiency was obtained by optimizing the p + related film process.

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