Hydrogen-plasma assisted molecular beam epitaxial growth of high-purity InAs

Chen, Y. Q.; Unuvar, T.; Moscicka, D.; Wang, W. I.

doi:10.1116/1.2192530

Cited by 5 publications

(3 citation statements)

References 16 publications

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“…The electron concentration in InAs NW is as suggested nonuniform . The concentration of the inner NW is close to that of bulk InAs, and at the level of 10 15 –10 16 cm –3 , whereas that at the NW surface is ∼10 18 cm –3 . , The inset in Figure a shows the estimated SCR length x in the NW side against effective donor concentration in NW with the effective acceptor concentration in the substrate to be 5 × 10 16 cm –3 . The x is 1000–400 nm for N D = 10 15 –10 16 cm –3 whereas it is negligible for N D = 10 18 cm –3 , indicating that the built-in electric field hardly affects the carriers at the NW surface.…”

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confidence: 57%

Midinfrared Photoluminescence up to 290 K Reveals Radiative Mechanisms and Substrate Doping-Type Effects of InAs Nanowires

et al. 2017

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Photoluminescence (PL) as a conventional yet powerful optical spectroscopy may provide crucial insight into the mechanism of carrier recombination and bandedge structure in semiconductors. In this study, mid-infrared PL measurements on vertically aligned InAs nanowires (NWs) are realized for the first time in a wide temperature range of up to 290 K, by which the radiative recombinations are clarified in the NWs grown on n- and p-type Si substrates, respectively. A dominant PL feature is identified to be from the type-II optical transition across the interfaces between the zinc-blend (ZB) and the wurtzite (WZ) InAs, a lower-energy feature at low temperatures is ascribed to impurity-related transition, and a higher-energy feature at high temperatures originates in the interband transition of the WZ InAs being activated by thermal-induced electron transfer. The optical properties of the ZB-on-WZ and WZ-on-ZB interfaces are asymmetric, and stronger nonradiative recombination and weaker carrier-phonon interaction show up in the NWs on p-type substrate in which built-in electric field forms and leads to carrier assembling around the WZ-on-ZB interface. The results indicate that wide temperature-range infrared PL analysis can serve as efficient vehicle for clarifying optical properties and bandedge processes of the crystal-phase interfaces in vertically aligned InAs NWs.

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confidence: 57%

Midinfrared Photoluminescence up to 290 K Reveals Radiative Mechanisms and Substrate Doping-Type Effects of InAs Nanowires

et al. 2017

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“…Hydrogen has also been reported to passivate defects in bulk and quantum well materials [2] and, recently, the quantum dot structures [3]. It is also reported that continuous irradiation by atomic hydrogen during epitaxial growth is more efficient for passivation of misfit dislocations than after growth H-plasma treatment [4][5][6]. However, for most of the cases the improvement drops after thermal treatment above around 300 • C due to the escape of hydrogen at elevated temperature.…”

Section: Many Device Applications Of Nanostructures Includingmentioning

confidence: 99%

Enhanced optical properties of InAs/GaAs quantum dots grown by radio-frequency hydrogen plasma-assisted molecular beam epitaxy

Katkov¹,

Chi²,

Wang³

et al. 2010

Semicond. Sci. Technol.

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Strong enhancement of photoluminescence (PL) efficiency has been observed in a GaAs/InAs quantum dots-in-a-well structure, grown with in situ irradiation of atomic hydrogen supplied by a radio-frequency hydrogen plasma source. The PL enhancement and wavelength position at room temperature have been found to be stable under extensive thermal annealing up to 630 • C in vacuum. As shown by the corresponding improvement of the barrier material, the possible mechanism for PL enhancement is the reduced nonradiative recombination in the barrier region by in situ passivation of defects while they are generated.

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“…Atomic-H has proved to be effective in passivating carrier concentration and improving material purity in III-V materials such as GaAs and InAs [6][7][8][9][10]. Furthermore, it has been found that atomic-H helps to promote an ideal layer-by-layer two-dimensional nucleation and step-flow growth mode on GaAs (100) substrate at low growth temperatures, thereby resulting in atomically flat surfaces [9].…”

Section: Introductionmentioning

confidence: 98%

Improvement of R0A product of type-II InAs/GaSb superlattice MWIR/LWIR photodiodes

Chen

Moy

Xin

et al. 2009

Infrared Physics & Technology

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Hydrogen-plasma assisted molecular beam epitaxial growth of high-purity InAs

Abstract: Articles you may be interested inMolecular beam epitaxy growth of high electron mobility InAs/AlSb deep quantum well structure

Cited by 5 publications

References 16 publications

Midinfrared Photoluminescence up to 290 K Reveals Radiative Mechanisms and Substrate Doping-Type Effects of InAs Nanowires

Midinfrared Photoluminescence up to 290 K Reveals Radiative Mechanisms and Substrate Doping-Type Effects of InAs Nanowires

Enhanced optical properties of InAs/GaAs quantum dots grown by radio-frequency hydrogen plasma-assisted molecular beam epitaxy

Improvement of R0A product of type-II InAs/GaSb superlattice MWIR/LWIR photodiodes

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