Hydrogen-related defects in InGaP/GaAs heterojunction bipolar transistors

Yamada, Hisashi; Fukuhara, Noboru; Hata, Masahiko; Akimoto, Katsuhiro

doi:10.1016/j.jcrysgro.2008.07.003

Cited by 1 publication

(1 citation statement)

References 17 publications

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“…F Brunner et al compared the two carbon doping methods for p-GaAs base layer and explained the mechanism of hydrogen incorporation [1,5,11]. Hisashi Yamada et al studied the extrinsic doping at different V/III ratio and clarified that a high V/III ratio contributes to reducing C-H complex and current gain drift [2,12,13]. J Mimila-Arroyo investigated the burn-in effect and the effect of thermal annealing on the carrier properties [7,[14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Burn-in effect in InGaP/GaAs HBT with intrinsically or extrinsically carbon doped base layer

et al. 2023

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InGaP/GaAs heterojunction bipolar transistors (HBTs) with intrinsically or extrinsically carbon doped base layers were grown by metal-organic chemical vapor deposition. Burn-in effect and the influence of thermal annealing at different temperatures on these devices were investigated. Results show that the intrinsically-carbon-doped HBTs demonstrate a higher current gain of 155 and a burn-in value of 24.0%, while the extrinsically-carbon-doped HBTs show a current gain of 92 and a burn-in value of 5.3%. Thermal annealing after exposing the base layer decreases the burn-in value from 24.0% to 5.7% and from 5.3% to 1.3% for intrinsically and extrinsically carbon doped HBTs, respectively, proved to be an effective method to eliminate the burn-in effect of HBT devices by hydrogen out diffusion. However, it also damages the base layer quality, leading to increased base recombination current and decreased current gain.

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