Hydrogen-related defects in polycrystalline CVD diamond

Zhou, Xiaowang; Watkins, G. D.; Rutledge, K. M. McNamara; Messmer, R. P.; Chawla, Sanjay

doi:10.1103/physrevb.54.7881

Cited by 117 publications

(78 citation statements)

References 28 publications

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“…Taking into account the EPR data on CVD diamond films [37,38] the spectrum 3 of the figure 2 may be interpreted as the superposition of the spectrum from the H1-center (the defect in diamond lattice containing one hydrogen atom, g = 2.0028) and the single line (g = 2.0025, ΔH pp = 0.40 ± 0.05 mT) from other centers.…”

Section: Methodsmentioning

confidence: 99%

Paramagnetic centers in detonation nanodiamonds studied by CW and pulse EPR

Fionov

Lund

Chen

et al. 2010

Chemical Physics Letters

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Dispersed detonation nanodiamonds have been studied by continuous-wave (CW) and pulse EPR techniques. The spectrum of bulk radicals (g = 2.0025 ± 0.0002, a Lorentz line shape with ΔH pp = 0.95 ± 0.05 mT) dominated in CW EPR and prevented to record spectra from other paramagnetic species. The pulse EPR spectrum was the superposition of the distorted P1-center spectrum with parameters (g = 2.0025, A xx = 2.57 mT, A yy = 3.08 mT, A zz = 4.07 mT), the H1-center spectrum (g = 2.0028) and the single line (g = 2.0025, ΔH pp = 0.40 ± 0.05 mT) from other centers which may be assigned to surface radicals. The concentration of P1-centers has been estimated by CW EPR as 2 ± 1 ppm N.

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Section: Methodsmentioning

confidence: 99%

Paramagnetic centers in detonation nanodiamonds studied by CW and pulse EPR

Fionov

Lund

Chen

et al. 2010

Chemical Physics Letters

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“…Over the past decade, much work has been carried out on the effect of nitrogen on CVD diamond growth and its properties [18][19][20]. It has been shown that the ESR signal of N-doped CVD diamonds is composed of two components that can be attributed to the N S 0 (P1-substitutional nitrogen) centre, as in natural diamond, and to the paramagnetic centre associated with C-related centres [15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

“…CVD diamond films intrinsically include the formation of crystal defects, for example grain boundaries, twins, bonding defects (dangling bonds, carbon interstitial), vacancy and impurities such as local inclusions of sp 2 -sites. All these defects are called C-related defects [13][14][15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Paramagnetic defects in diamond films synthesized by the hot filament chemical vapour deposition

Banaszak-Piechowska

Fabisiak

Kaczmarski

et al. 2006

Cryst. Res. Technol.

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Defects in nitrogen-doped diamond films, produced by hot filament chemical vapour deposition have been studied by Electron Spin Resonance (ESR), Raman spectroscopy and Scanning Electron Microscopy (SEM). The peak-to-peak ESR line width (∆H pp ) varies in the range 0.36-0.52 mT and depends on the nitrogen concentration in the process gas. In the case of nitrogen-doped diamond films ESR spectrum shows a hyperfine structure typical of N S 0 paramagnetic centre. The shape of the central ESR line shows that it is a superposition of two components: a narrower Lorentzian and a broader Gaussian one, characterized by different saturation behaviour. With increasing nitrogen concentration in process gas the ratio of integral intensities A G /A L (Gausian to Lorentzian) of ESR spectrum also increases. The Raman spectra show that with increasing doping level the diamond Raman line at 1332.5 cm -1 broadens, the broad band at about 1530 cmbecomes more pronounced what indicate on degradation of diamond crystallinity and it is in agreement with SEM observation.

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“…Theoretical calculations identified bond-centred hydrogen as the most stable position for one H atom in diamond [19] and the H * 2 complex for two H atoms [20]. Experimental studies demonstrate that hydrogen in diamond condenses mainly near grain boundaries [21]. IR absorption measurements suggest that, at low temperatures, a fraction of hydrogen in CVD diamond is present in an unbound form, and it was suggested that this forms H 2 molecules [22].…”

Section: Introductionmentioning

confidence: 99%

First-principles calculations on the structure of hydrogen aggregates in silicon and diamond

Martsinovich¹,

Heggie²,

Ewels³

2003

J. Phys.: Condens. Matter

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We report the results of first-principles calculations on the early stages of hydrogen aggregation in silicon and diamond. We demonstrate that the hydrogenated glide dislocation dipole is the preferred structure for small numbers of H atoms in silicon and that it expands by dislocation glide, with hydrogen condensing in the shuffle plane between the dislocations. This structure is a good candidate for the initial stage in the development of hydrogeninduced platelets. We investigate the effect of shear and dilation on the energies of hydrogenated structures and compare the relative stabilities of these structures in silicon and diamond. We describe the method of determination of the Burgers vectors of dilation and shear for the dislocation dipoles by varying the lattice vectors of their supercells.

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Hydrogen-related defects in polycrystalline CVD diamond

Cited by 117 publications

References 28 publications

Paramagnetic centers in detonation nanodiamonds studied by CW and pulse EPR

Paramagnetic centers in detonation nanodiamonds studied by CW and pulse EPR

Paramagnetic defects in diamond films synthesized by the hot filament chemical vapour deposition

First-principles calculations on the structure of hydrogen aggregates in silicon and diamond

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