Hydrogen retention properties of SiC converted graphite

Yamauchi, Yuji; Hino, Tomoaki; Hirohata, Yuko; Yamashina, T.

doi:10.1016/0042-207x(96)00105-4

Cited by 15 publications

(7 citation statements)

References 18 publications

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“…For example, the following reaction () could additionally be taken into account. In this study, the thermal release measurement data revealed peak temperatures, the shape of the spectra, and the activation energy, which differ from those obtained in studies carried out by other authors 1–4,7,8 . This is because the behavior of gas release is considered to be strongly dependent on the character of the specimen and the conditions during implantation.…”

Section: Resultscontrasting

confidence: 76%

“…D 2 (6) In this study, the thermal release measurement data revealed peak temperatures, the shape of the spectra, and the activation energy, which differ from those obtained in studies carried out by other authors. [1][2][3][4]7,8 This is because the behavior of gas release is considered to be strongly dependent on the character of the specimen and the conditions during implantation. For example, Iguchi et al 7 demonstrated that the peak temperature of D 2 release depended on the energy of the implanted deuterium ion.…”

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confidence: 99%

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Gas Release of SiC Implanted with Deuterium or Helium

Aihara¹,

Sawa²,

Furuya

et al. 2005

Journal of the American Ceramic Society

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Helium (He+) or Deuterium (D2+) (20 keV) was implanted into polycrystalline β‐SiC with an ion dose of 7.2 × 1021 (D or He)/m2. The implanted specimens were heated at a heating rate of 10 or 20 K/min from room temperature to 1373 K, and the thermal release spectroscopic data were obtained. A sharp peak appeared at approximately 1270 K in the case of He release, and here the activation energy was estimated to be approximately 4.4 eV. Two overlapped peaks appeared at approximately 900 and 1200 K in the case of D2 release. The shapes of spectra showed strong dependence on the heating rate.

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Section: Resultscontrasting

confidence: 76%

mentioning

confidence: 99%

Gas Release of SiC Implanted with Deuterium or Helium

Aihara¹,

Sawa²,

Furuya

et al. 2005

Journal of the American Ceramic Society

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“…Before the irradiation experiments, the samples were degassed at 1273 K for 30 min to remove absorbents, such as H 2 O. Helium ion irradiation followed by deuterium ion irradiation was conducted in an ECR ion irradiation apparatus [8][9][10] . The ‰ux of helium ions was in the order of 10 13 cm -2 s -1 , which was estimated from the sample current.…”

Section: Methodsmentioning

confidence: 99%

Effects of Helium Ion Irradiation on Deuterium Retention Behavior of SiC/SiC Composites as Plasma Facing Materials for Fusion Reactors

et al. 2012

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SiC/SiC composites are promising materials for the plasma-facing walls in a fusion reactor. In order to investigate the eŠect of helium ion irradiation on the deuterium retention behavior of SiC/SiC composites, helium ion irradiation followed by deuterium ion irradiation was performed on SiC/SiC composites using an ECR ion source. After the irradiation experiments, deuterium retention behavior was measured using thermal desorption spectroscopy technique. The total amount of retained deuterium was enhanced with helium pre-irradiation. Thermal desorption spectra of D 2 showed two main peaks which could be explained as deuterium released from its Si-D and C-D bonds, respectively. These two peaks temperatures were shifted to low temperatures with helium pre-irradiation. The atomic composition of silicon at the sample surface increased after helium irradiation. Due to this silicon composition increase, the amount of deuterium trapped due to the Si-D bond increased greatly. This data indicates a large eŠect of helium irradiation on the deuterium retention behavior of SiC/SiC composites.

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“…C H bond on the graphite surface formed by the irradiation might prevent the solvent adsorption. In addition, the C H bond is thermally stable at elevated temperature 7) . So, the C H bond might lead to the reduction of gasses in the anode material after the soaking.…”

Section: Introductionmentioning

confidence: 99%

“…The desorption amount around 1173 K gradually increased with the hydrogen ion ‰uence. It was reported that hydrogen desorption from C H bond formed by hydrogen ion irradiation to graphite material occurred at high temperature region around 1100 K 7) . This result suggests that implanted hydrogen ions form C H bond with carbon on active site and then C H bond might prevent the electrolyte adsorption during the subsequent soaking.…”

Section: Conˆrmation Of Formation Of C H Bond By Hydro-mentioning

confidence: 99%

Reduction of Gas Desorption in Graphite Anode Used in Lithium Ion Battery by Hydrogen Plasma Irradiation

et al. 2011

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In order to reduce amount of electrolyte solvent desorbed from anode material in lithium ion battery, hydrogen plasma irradiation for the anode material was conducted. During the irradiation, the sample was negatively biased. Natural graphite sample after the hydrogen plasma irradiation was soaked in propylene carbonate (PC) used as electrolyte solvent. Then, the gas desorption behavior was investigated by using a technique of thermal desorption spectroscopy (TDS). The amount of gasses in the sample irradiated by hydrogen plasma due to the PC was reduced compared with case in the non-irradiated sample. The reduction by the irradiation became large with the increase of negative bias voltage. The reduction also increased with the ‰uence and became roughly constant in the higher ‰uence regime. In order to discuss this mechanism, the sample without the soaking in PC was heated up to 1173 K. H 2 desorption at high temperature region, around 1173 K, increased for the irradiated sample, compared with non-irradiated sample. This result suggests that implanted hydrogen ions form C H bond with carbon of active sites and then the C H bond might prevent the PC from adsorbing during the subsequent soaking.

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Hydrogen retention properties of SiC converted graphite

Cited by 15 publications

References 18 publications

Gas Release of SiC Implanted with Deuterium or Helium

Gas Release of SiC Implanted with Deuterium or Helium

Effects of Helium Ion Irradiation on Deuterium Retention Behavior of SiC/SiC Composites as Plasma Facing Materials for Fusion Reactors

Reduction of Gas Desorption in Graphite Anode Used in Lithium Ion Battery by Hydrogen Plasma Irradiation

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