Hydrogen Segregation To Interfaces

Abstract

In order to achieve a better understanding of hydrogen segregation to interfaces, a combination of techniques is being used in which hydrogen is deliberately introduced into planar interfaces between thin films, then the segregation measured using highenergy ion-beam profiling techniques. Results are given for heterophase interfaces produced by epitaxial deposition on silicon: The AI/Si (111) and CoSi 2 /Si (001) interfaces. A preliminary study of Au tilt boundaries in thin-film bicrystals shows the presence of a large amount of hydrogen, -1016 atoms/cm 2 , in the boundary after plasma hydrogenation, but also the presence of C impurity (-1.6 x 1015 atoms/cm 2 ) and Ag.