Hydrogen sensing performance of a Pd/HfO2/GaN metal-oxide-semiconductor (MOS) Schottky diode

Chen, Huey-Ing; Chang, Che-Wei; Lu, Hsin-Wei; Liu, I-Ping; Chen, Wei-Cheng; Ke, Bu-Yuan; Liu, Wen‐Chau

doi:10.1016/j.snb.2018.02.077

Cited by 27 publications

(25 citation statements)

References 41 publications

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“…Coatings 2019, 9, x FOR PEER REVIEW 2 of 10 [16], Pd/HfO2/GaN [17], and Al/SnO2/p-Si (111) [18]. Due to the presence of the oxide layer, several parameters can be applied to improve the characteristics of electronic devices.…”

Section: Methodsmentioning

confidence: 99%

“…Previous studies created the thin, high-quality insulator layer between the metal and semiconductor that is used to create a metal-oxide-semiconductor (MOS) structure, which was an important factor for the high-performance of MOS devices [6][7][8][9][10]. Researchers investigated the contact of MOS layers via various approaches, e.g., Al/HfO 2 /p-Si [7], Pt/oxide/n-InGaP [10], Pt/SiO 2 /n-InGaN [11], Pd/NiO/GaN [12], Au/SiO 2 /n-GaN [13], Au/SnO x /n-LTPS/glass [14], Pt/SiO 2 /n-GaN [6,15], Pt/Oxide/Al 0.3 Ga 0.7 As [16], Pd/HfO 2 /GaN [17], and Al/SnO 2 /p-Si (111) [18].…”

Section: Introductionmentioning

confidence: 99%

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Electrical and Structural Properties of All-Sputtered Al/SiO2/p-GaN MOS Schottky Diode

et al. 2019

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The all-sputtered Al/SiO2/p-GaN metal-oxide-semiconductor (MOS) Schottky diode was fabricated by the cost-effective radio-frequency sputtering technique with a cermet target at 400 °C. Using scanning electron microscope (SEM), the thicknesses of the electrodes, insulator SiO2 layer, and p-GaN were found to be ~250 nm, 70 nm, and 1 µm, respectively. By Hall measurement of a p-Mg-GaN film on an SiO2/Si (100) substrate at room temperature, the hole’s concentration (Np) and carrier mobility (μ) were found to be Np = 4.32 × 1016 cm−3 and μ = 7.52 cm2·V−1·s−1, respectively. The atomic force microscope (AFM) results showed that the surface topography of the p-GaN film had smoother, smaller grains with a root-mean-square (rms) roughness of 3.27 nm. By I–V measurements at room temperature (RT), the electrical properties of the diode had a leakage current of ~4.49 × 10−8 A at −1 V, a breakdown voltage of −6 V, a turn-on voltage of ~2.1 V, and a Schottky barrier height (SBH) of 0.67 eV. By C–V measurement at RT, with a frequency range of 100–1000 KHz, the concentration of the diode’s hole increased from 3.92 × 1016 cm−3 at 100 kHz to 5.36 × 1016 cm−3 at 1 MHz, while the Fermi level decreased slightly from 0.109 to 0.099 eV. The SBH of the diode at RT in the C–V test was higher than in the I–V test because of the induced charges by dielectric layer. In addition, the ideality factor (n) and series resistance (Rs) determined by Cheung’s and Norde’s methods, other parameters for MOS diodes were also calculated by C–V measurement at different frequencies.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electrical and Structural Properties of All-Sputtered Al/SiO2/p-GaN MOS Schottky Diode

et al. 2019

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“…Despite it, increased demand for hydrogen sensors is found for efficiently detecting hydrogen gas leakage. Chen et al [39] fabricated a Pd/HfO 2 /GaN MOS Schottky diode for hydrogen sensing and showed that the response time decreases from 39 to 5.3 s and 42 to 2.5 s when temperature increases from 300 to 383 K, respectively. However, it reported a lower detection limit of 5 ppm H 2 /air and showed a higher sensing response of 4.9×10 5 under 1% H 2 /air gas at 300 K at a 0.5 V forward voltage.…”

Section: = -mentioning

confidence: 99%

“…The schematic diagram of a MOS structure is shown in figure 2. Chen et al [39] coproduced Pd/GaAs and Pd/InP MOS Schottky diodes as hydrogen sensors, with the crosssection of the structures. It was shown that interfacial oxide significantly improves barrier height resulting from the Fermi level pinning weakening for both GaAs and InP Schottky structures [47].…”

Section: Introductionmentioning

confidence: 99%

Metal oxide semiconductor-based Schottky diodes: a review of recent advances

Al-Ahmadi

2020

Mater. Res. Express

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Metal-oxide-semiconductor (MOS) structures are essential for a wide range of semiconductor devices. This study reviews the development of MOS Schottky diode, which offers enhanced performance when compared with conventional metal-semiconductor Schottky diode structures because of the presence of the oxide layer. This layer increases Schottky barrier heights and reduced leakage currents. It also compared the MOS and metal-semiconductor structures. Recent advances in the development of MOS Schottky diodes are then discussed, with a focus on aspects such as insulating materials development, doping effects, and manufacturing technologies, along with potential device applications ranging from hydrogen gas sensors to photodetectors. Device structures, including oxide semiconductor thin film-based devices, p-type and n-type oxide semiconductor materials, and the optical and electrical properties of these materials are then discussed with a view toward optoelectronic applications. Finally, potential future development directions are outlined, including the use of thinfilm nanostructures and high-k dielectric materials, and the application of graphene as a Schottky barrier material.Low contact resistance is required for good ohmic contact and high-speed semiconductor devices. In contrast, an ideal Schottky junction acts like an ideal diode, where high current only flows in the forward-biased direction and offers infinite resistance in the opposite direction [11]. The type of junction can be changed by varying different metals and the doping level of the semiconductor [12]. The core focus of this study is on the Schottky diode for its use in the switching devices, which reduces the current leakage and power consumption [13].This review is categorized into fives sections. Following the introductory section, the comparison of MS and MOS devices is provided in the second section, while important equations related to MOS Schottky Diode are described for carrier transport mechanism in the third section. The fourth section highlights the recent progress of MOS devices and their applications in the fourth section. Lastly, section five briefly sums up the reviewed findings and indicates the future direction of the work. ReviewGenerally, the metal oxide/insulator semiconductor (MOS/MIS) structure is obtained by inserting an insulator layer between a metal and a semiconductor [14]. In the MOS structure, an oxide layer separates the metal and semiconductor from each other. For instance, at the metal/insulator interfaces, there is a continuous distribution of surface states with energies located in the bandgap of the semiconductor [15]. The intermediate oxide layer helps prevent the diffusion of the metal into the semiconductor but also alleviates the electric field reduction in MIS Schottky diodes. The interfacial layer helps determine the device characteristics, performance, and stability [16]. Karabulut et al [17] explains that the MOS or MIS capacitor is the most effective device for semiconductor surfaces based on their practical...

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“…However, certain crystalline phases have a higher dielectric constant (cubic: k ~ 29, tetragonal: k ~ 70, and monoclinic: k ~ 16), so stabilization of these phases is not undesirable 2,31 . For sensing applications, such as detection of CO 32,33 , NO2 34 , and H2 35 , HfO2 polycrystalline powders are preferred. Doping has been demonstrated to assist in the stabilization of the ferroelectric and antiferroelectric phases [36][37][38][39] .…”

Section: Introductionmentioning

confidence: 99%

Low-Temperature Dopant-Assisted Crystallization of HfO₂ Thin Films

Gougousi

2021

Crystal Growth & Design

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We have studied the thermal atomic layer deposition (ALD) of HfO2 on native and chemical oxide GaAs(100) surfaces using the amide precursors tetrakis ethymethyl amino hafnium and tetrakis dimethylamino hafnium. Bright-field and HRTEM data for as-prepared HfO2 films deposited on both GaAs(100) oxide surfaces show that the films are polycrystalline and contain several large grains of the order of the film thickness and numerous smaller ones. X-ray diffraction confirms the presence of small crystallites that can be classified in forms other than monoclinic while control films deposited on native oxide Si(100) surfaces are amorphous.Thermally treated films deposited on both Si and GaAs contain mainly monoclinic grains.Gallium and arsenic oxides are known to bubble through the growing HfO2 film so that at any point during the ALD process, there is mixing of the various III-V oxides in the film. These oxides seem to stabilize the various HfO2 polymorphs during low-temperature thermal ALD allowing control of the film microstructure via the deposition process.

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Hydrogen sensing performance of a Pd/HfO2/GaN metal-oxide-semiconductor (MOS) Schottky diode

Cited by 27 publications

References 41 publications

Electrical and Structural Properties of All-Sputtered Al/SiO2/p-GaN MOS Schottky Diode

Electrical and Structural Properties of All-Sputtered Al/SiO2/p-GaN MOS Schottky Diode

Metal oxide semiconductor-based Schottky diodes: a review of recent advances

Low-Temperature Dopant-Assisted Crystallization of HfO₂ Thin Films

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Hydrogen sensing performance of a Pd/HfO2/GaN metal-oxide-semiconductor (MOS) Schottky diode

Cited by 27 publications

References 41 publications

Electrical and Structural Properties of All-Sputtered Al/SiO2/p-GaN MOS Schottky Diode

Electrical and Structural Properties of All-Sputtered Al/SiO2/p-GaN MOS Schottky Diode

Metal oxide semiconductor-based Schottky diodes: a review of recent advances

Low-Temperature Dopant-Assisted Crystallization of HfO2 Thin Films

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Product

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Low-Temperature Dopant-Assisted Crystallization of HfO₂ Thin Films