Hydrogen sensitivity of the sensors based on nanostructured lead sulfide thin films deposited on a-SiC:H and p-Si(100) substrates

Kaci, S.; Keffous, A.; Hakoum, S.; Mansri, A.

doi:10.1016/j.vacuum.2015.02.024

Cited by 33 publications

(6 citation statements)

References 37 publications

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“…The addition of metal ions generates the effect (Eg) of the material, which increases as the size of the particle decreases. This property makes it an excellent candidate for opto-electronic applications in many fields such as photography, IR detectors, solar absorbers, lightemitting devices and solar cells [20,21]. Increases in the optical energy band gap (Eg) of the thin films can be attributed to quantum size effects, which are expected from thin films with a nanocrystalline nature [22].…”

Section: Introductionmentioning

confidence: 99%

Preparation of nanocrystalline Cd-doped PbS thin films and their structural and optical properties

Rajathi¹,

Kirubavathi²,

Selvaraju³

2017

Journal of Taibah University for Science

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PbS and Cd-doped PbS nanocrystalline thin films prepared by the chemical bath deposition technique was deposited onto glass substrates at 80 • C. The aqueous solution containing Cd 2+ and Pb 2+ precursors was used to obtain good quality film deposits at optimized preparative parameters. The characterization of these films was performed using X-ray diffraction, optical absorption, photoluminescence properties, scanning electron microscopy and energy dispersive X-ray analyses to explore the properties of the PbS and Cd-doped PbS films. The prepared films were adherent to the substrate and well crystallized according to the cubic structure, which displayed a preferred orientation. According to the X-ray diffraction analysis, the crystallite size of the films decreased from 74 nm to 64 nm with increasing Cd doping. The optical properties were determined from ultraviolet-visible spectroscopy measurements in the absorbance energy range from 300-1200 nm. The UV-visible analysis shows that the band gap value of the PbS thin films increased from 2.12 eV to 2.65 eV by doping with Cd. Morphological analysis showed that the shape of the grains over the substrate surface was changed from a regular random orientation to an irregular shape with Cd doping. The energy dispersive X-ray analysis showed that the film contains Cd, Pb and S elements without any other impurities.

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Section: Introductionmentioning

confidence: 99%

Preparation of nanocrystalline Cd-doped PbS thin films and their structural and optical properties

Rajathi¹,

Kirubavathi²,

Selvaraju³

2017

Journal of Taibah University for Science

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“…It permits size quantization effects of size confinement [7]. This semiconductor is an important functional material and has been used in several applications such as IR detector [8], solar absorber [9], Pb 2+ ion-selective sensors [10], NO 2 , NH 3 and H 2 gas sensors [11][12][13]. In order to study the possibility to develop heterojunctions which could be suitable for applications in optoelectronic devices such as light emitting diodes, heterojunctions based on nc-MS/a-SiC:H (with M = Pb) were investigated.…”

Section: Introductionmentioning

confidence: 99%

Influence of Growth Conditions of Hydrogenated Amorphous Silicon Carbide on Optical Properties of the Interfacial Layer in SiC-Based Photodevice

et al. 2016

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“…The addition of metal ions to this material decreases the size of the particle thereby increasing its energy gap. Because of these reasons, it becomes an excellent candidate for opto-electronic applications in the fields such as solar cell, IR detectors, light emitting and photography [20,21]. The doping of Cd and Ni in PbS thin films produces a significant shift in the forbidden energy band gap with energy range, 0.15 to 0.5eV and 1.4 to 2.4 [22].…”

Section: Inntroductionmentioning

confidence: 99%

Study of Optical Property of CD Doped PBS Nanocrystalline Thin Films Fabricated by Chemical Bath Deposition Technique

Singh¹

2018

IJRASET

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The Cd doped PbS (CdPbS) nanocrystalline thin films were fabricated using glass substrate by chemical bath deposition technique at 50°C. The XRD analysis shows the nanocrystalline nature of Cd-doped PbS thin films. The crystallite size of Cd-doped PbS thin film was found to be 27.24 nm. The morphology of the films was examined by Scanning Electron Microscopy (SEM) and it shows the presence of crystallites having uniform size. The energy band gap increases with decrease of molarities of CdPbS nanocrystalline thin films.

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Hydrogen sensitivity of the sensors based on nanostructured lead sulfide thin films deposited on a-SiC:H and p-Si(100) substrates

Cited by 33 publications

References 37 publications

Preparation of nanocrystalline Cd-doped PbS thin films and their structural and optical properties

Preparation of nanocrystalline Cd-doped PbS thin films and their structural and optical properties

Influence of Growth Conditions of Hydrogenated Amorphous Silicon Carbide on Optical Properties of the Interfacial Layer in SiC-Based Photodevice

Study of Optical Property of CD Doped PBS Nanocrystalline Thin Films Fabricated by Chemical Bath Deposition Technique

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