1979
DOI: 10.1016/0022-3115(79)90514-2
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Hydrogen solubilisation into and permeation through wall materials

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Cited by 87 publications
(18 citation statements)
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“…1͒ up to ϳ1770 K ͑at H 2 pressure 10 −6 -10 −4 Pa͒ results in the generation of atomic hydrogen and consequently in the radical increase in perme- ation flux. 1,21,22 One can evaluate the sticking coefficient for atoms, ␣ H , in the same way as ␣ H 2 ͓see Eq. ͑2͔͒,…”
Section: Permeation Methods To Study the Sticking Of H Atomsmentioning
confidence: 99%
“…1͒ up to ϳ1770 K ͑at H 2 pressure 10 −6 -10 −4 Pa͒ results in the generation of atomic hydrogen and consequently in the radical increase in perme- ation flux. 1,21,22 One can evaluate the sticking coefficient for atoms, ␣ H , in the same way as ␣ H 2 ͓see Eq. ͑2͔͒,…”
Section: Permeation Methods To Study the Sticking Of H Atomsmentioning
confidence: 99%
“…The model calculation of the permeation number W proposed by Waelbroeck et al 22) indicated that the permeation/dissolution through the Tienriched surface is controlled by the surface reactions, i.e. W ( 1, in the expected operation temperature range (603-883 K) if the wall thickness L is smaller than 100 mm.…”
Section: Change In the Surface State By Heat Treatmentmentioning
confidence: 99%
“…This difference in hydrogenation behavior was ascribed to the difference in surface properties between MgNi 2 and Ni. According to the theoretical models for the interaction between metals and atomic hydrogen, [18][19][20] the concentration of hydrogen in the specimen particles is determined by balance between the flux of penetrating hydrogen atoms and recombination release of hydrogen molecules. Here the influences of impurities adsorbed on the particle surfaces are quite different between penetrating process and recombination process.…”
Section: Mmentioning
confidence: 99%
“…Since the internal energy of hydrogen atoms is higher than that of molecules by 2.24 eV, the penetration flux of atoms is scarcely dependent on the concentration of surface impurities. [18][19][20] On the other hand, the recombination release is markedly retarded by surface impurities. [18][19][20] Hence, the concentration of hydrogen in the particles increases with that of surface impurities.…”
Section: Mmentioning
confidence: 99%
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