While hydrogen combustion generates a lot of energy and
can be
done in a variety of ways, the primary challenge in utilizing hydrogen
energy is obtaining an efficient hydrogen storage material. Herein,
the potential of Ga12As12 as a hydrogen adsorbent
and storage material was investigated within the framework of density
functional theory (GGA-DFT) computations at the B3LYP-GD3BJ/def2tzvp
level of theory. The study was systematically conducted by increasing
the number of molecular hydrogen adsorptions (n =
1–4) at Ga- and As- sites of the Ga12As12 adsorbent material. Results showed that adsorption on the As site
is preferred as the hydrogen binding on this site is closer to the
DoE requirement. Via DFT-GGA with the incorporation
of D3 dispersion, we demonstrated that the Ga12As12 nanocluster can store up to four molecular hydrogens with a calculated
gravimetric wt % of 5.71%, closer to the 6.5 wt % proposed by the
DoE. Average binding energies for both As and Ga adsorption sites
were observed to be −0.49 and −0.84 eV, respectively,
which is within the range of H2 adsorption energy according
to DoE. The electronic properties, thermodynamics, and the density
of state disclosed a linear relationship with the increase in H2 adsorption. This trend is also seen in the adsorption energy,
which shows a higher adsorption range as the number of hydrogen molecules
on the Ga12As12 nanocage increases. Ab initio molecular dynamics simulations divulged that the
studied system is considerably stable both at room temperature and
at extreme temperatures. Based on the utilization of GGA exchange
correlations, confirmation of stability via ab initio MD simulations, high desorption temperature (1454 K), and the computed
gravimetric wt % (5.71), which is close to the DoE standard (6.5%),
we strongly believe that proper surface engineering of the studied
Ga12As12 nanocluster could further improve the
overall properties and suitability toward hydrogen storage applications.