Hydrogen TDS spectra and their relation to the conditions of implantation and retention of hydrogen in graphite materials

Hydrogen trapping in carbon film: From laboratories studies to tokamak applications

“…The maximum of the thermal desorption from samples irradiated with low energy (0 Ei 200 eV) hydrogen ions and atoms appears in the range 700e850 K [3,4]. This result has been confirmed by a dedicated experiment undertaken during this study.…”

“…This restructuration leads to a structure which is similar to the near surface region of the irradiated sample in Refs. [3,4]. So, in the TDS spectrum presented here, band 1 and band 2 correspond to potential trapping and band 3 corresponds to kinetics trapping.…”

“…A general analysis of a large number of experiments dealing with the measurements of the spectra of thermal desorption of hydrogen isotopes from graphite materials has been made in the Begrambekov's paper [3,4]. It appears that the positions of the peaks of TDS spectra depend on the energy of the impinging particles at the surface of the PFCs and reflect the condition of the near surface layer of the irradiated material.…”

“…A comparison with previous works [3,4] is proposed to assess the deuterium trapping processes which can be considered during plasma operation in Tore Supra. Complementary experiments, mainly ions implantation in dedicated samples coming from an erosion area followed by TDS, are proposed and analysed.…”

Thermal Desorption of Krypton Implanted into Silicon

“…ion irradiation as the analysis of gas release spectra provides much information concerning atom diffusion, desorption and their trapping by lattice defects like vacancies and their clusters [1]. TDS spectroscopy is often used to study radiation induced damage as well as retention/release of gases like deuterium in the plasmafacing materials intended to be used in the controllable fussion devices including tungsten [2,3], beryllium [4][5][6] or graphite [7]. The technique was often employed in the case of materials widely applied in electronics, like silicon [8,9] for implanted metals [10][11][12] as well as thin films [13][14][15].…”