Hydrogen-terminated boron-doped diamond films under intense gamma irradiation

Abstract

Carbon-based materials continue to attract attention because of their unique unsurpassable combination of physical properties thus offering multifunctionality. Included in this group of materials are numerous including HPHT diamond, low pressure chemical vapor deposited diamond thin films in multiple forms (poly-/micro-and nanocrystalline), nanostructured carbon, disordered tetrahedral carbon (DTC), micro-/nanocrystalline graphite, carbon nanotubes, as well as graphene. Among this family, diamond is a promising wide bandgap semiconductor with a large potential offering excitement and interest due to its unique blend of superlative physical (electronic, optical, mechanical, and chemical) properties [1]. Diamond and specifically doped-or impurity-incorporated diamond is of great interest for multiple applications such as for electrochemical micro-electrodes, high temperature, high power and frequency devices. Besides, it is reputed for being radiation hard thus predestined its usage in the development of radiation hard electronics over the existed semiconductors e.g. Si, GaAs, and AlGaN [2]. For space or extreme radiation environment applications such as deep UV photodiode (alternatively, visible blind), medical radiotherapy, and novel nuclear micro-battery [3][4][5][6], it is of utmost importance to demonstrate the influence of radiation on materials' structural integrity as well as physical stability. Since the structure dictate materials' physical properties, the assessment of physical properties provides a general guideline helping us to determine the nature of defects and/or structural modification induced due to radiation and its effect on the prototype device.