“…Therefore, various dielectrics have been used as gate dielectric layer and passivation layers to enhance the stability of the C-H diamond, such as aluminum oxide (Al 2 O 3 ) 8 , hafnium dioxide (HfO 2 ) 9 , molybdenum oxide (MoO 3 ) 10 , vanadium oxide (V 2 O 5 ) 11 , silicon nitride (SiN x ) 12 , and hexagonal boron nitride (h-BN) 13 . Among them, C-H diamond metal-insulator-semiconductor FETs (MISFETs) with an Al 2 O 3 dielectric layer have shown many encouraging achievements, including thermal stability 14 , output current density 15 , output power density 16,17 , and cut-off frequency 18 , suitable for practical applications.…”