2022
DOI: 10.1080/26941112.2022.2082853
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Hydrogen-terminated diamond MOSFETs on (0 0 1) single crystal diamond with state of the art high RF power density

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Cited by 39 publications
(15 citation statements)
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“…Considering the previously reported works in which the current density is normalized with respect to the gate length and gate width, even on the (001) and (111) single crystal diamond substrates. [ 4–7,38–42 ] This work breaks the record of | I D |* L G = 2000 µm mA mm −1 . This indicates that the (110) DC arc‐jet polycrystalline diamond substrate is a promising candidate for 2DHG diamond FETs.…”
Section: Resultssupporting
confidence: 53%
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“…Considering the previously reported works in which the current density is normalized with respect to the gate length and gate width, even on the (001) and (111) single crystal diamond substrates. [ 4–7,38–42 ] This work breaks the record of | I D |* L G = 2000 µm mA mm −1 . This indicates that the (110) DC arc‐jet polycrystalline diamond substrate is a promising candidate for 2DHG diamond FETs.…”
Section: Resultssupporting
confidence: 53%
“…The H‐terminated diamond FETs usually exhibit normally‐on operation because of the existence of a 2DHG with zero gate voltage. [ 7,10 ] In power‐switching applications, the normally‐off operation is desirable, to suppress the static power consumption and achieve safe and fast switching. Although much effort has been devoted to developing diamond FETs capable of normally‐off operation, including deposition of gate dielectrics with positive charges, [ 11,12 ] channel‐structure modification, [ 2,13 ] and design of special device structures, [ 14 ] all of them lead to a significant reduction in the drain current density because of the decreased carrier density in the channel region.…”
Section: Introductionmentioning
confidence: 99%
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“…Therefore, various dielectrics have been used as gate dielectric layer and passivation layers to enhance the stability of the C-H diamond, such as aluminum oxide (Al 2 O 3 ) 8 , hafnium dioxide (HfO 2 ) 9 , molybdenum oxide (MoO 3 ) 10 , vanadium oxide (V 2 O 5 ) 11 , silicon nitride (SiN x ) 12 , and hexagonal boron nitride (h-BN) 13 . Among them, C-H diamond metal-insulator-semiconductor FETs (MISFETs) with an Al 2 O 3 dielectric layer have shown many encouraging achievements, including thermal stability 14 , output current density 15 , output power density 16,17 , and cut-off frequency 18 , suitable for practical applications.…”
mentioning
confidence: 99%