The presence of surface/deep
defects in 4d- and 5d-perovskite oxide
(ABO
3
, B = Nb, Ta, Mo, etc.) nanoparticles (NPs), originating
from multivalent B-site cations, contributes to suppressing their
metallic properties. These defect states can be removed using a H
2
/Ar thermal treatment, enabling the recovery of their electronic
properties (i.e., low electrical resistivity, high carrier concentration,
etc.) as expected from their electronic structure. Therefore, to engineer
the electronic properties of these metastable perovskites, an oxygen-controlled
crystallization approach coupled with a subsequent H
2
/Ar
treatment was utilized. A comprehensive study of the effect of the
post-treatment time on the electronic properties of these perovskite
NPs was performed using a combination of scattering, spectroscopic,
and computational techniques. These measurements revealed that a metallic-like
state is stabilized in these oxygen-reduced NPs due to the suppression
of deep rather than surface defects. Ultimately, this synthetic approach
can be employed to synthesize ABO
3
perovskite NPs with
tunable electronic properties for application into electrochemical
devices.