Hydrogenated Nanocrystalline Silicon Thin Films Prepared by Hot-Wire Method with Varied Process Pressure

Waman, Vaishali P.; Funde, Adinath M.; Kamble, Mahesh M.; Pramod, M. R.; Hawaldar, Ranjit; Amalnerkar, Dinesh; Sathe, Vasant; Gosavi, Suresh; Jadkar, Sandesh

doi:10.1155/2011/242398

Cited by 25 publications

(10 citation statements)

References 50 publications

(54 reference statements)

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“…Of particular importance are the microcrystalline films by HW deposited with 95% hydrogen dilution where the large supply of atomic hydrogen to the surface of the growing film seems to be enough to overcome the thickness dependence and allows films to be produced which has higher σ ph and the same σ d as reference films on substrates. The very different character of the amorphous to microcrystalline transition in RF (abrupt) and HW (gradual) observed in films deposited on substrate [6] is confirmed here for films deposited on PET. The values of hydrogen dilution at which the amorphous to microcrystalline transition occurs in RF for T sub =25 ºC and T sub =100 ºC is the same for films deposited on PET and on substrate.…”

Section: Discussionsupporting

confidence: 72%

A Comparison between Thin-Film Transistors Deposited by Hot-Wire Chemical Vapor Deposition and PECVD

Zarchi¹,

Ahangarani²

2015

Metall Mater Eng

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The effect of new growth techniques on the mobility and stability of amorphous silicon (a-Si:H) thin film transistors (TFTs) has been studied. It was suggested that the key parameter controlling the field-effect mobility and stability is the intrinsic stress in the a-Si:H layer. Amorphous and microcrystalline silicon films were deposited by radiofrequency plasma enhanced chemical vapor deposition (RF-PECVD) and hot-wire chemical vapor deposition (HW-CVD) at 100 ºC and 25 ºC. Structural properties of these films were measured by Raman Spectroscopy. Electronic properties were measured by dark conductivity, σd, and photoconductivity, σph. For amorphous silicon films deposited by RF-PECVD on PET, photosensitivity's of >105 were obtained at both 100 º C and 25 ºC. For amorphous silicon films deposited by HW-CVD, a photosensitivity of > 105 was obtained at 100 ºC. Microcrystalline silicon films deposited by HW-CVD at 95% hydrogen dilution show σph~ 10-4 Ω-1cm-1, while maintaining a photosensitivity of ~102 at both 100 ºC and 25 ºC. Microcrystalline silicon films with a large crystalline fraction (> 50%) can be deposited by HW-CVD all the way down to room temperature.

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Section: Discussionsupporting

confidence: 72%

A Comparison between Thin-Film Transistors Deposited by Hot-Wire Chemical Vapor Deposition and PECVD

Zarchi¹,

Ahangarani²

2015

Metall Mater Eng

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“…The Raman signal shows two main components: (i) a strong narrow component (green) at 512.7 cm –1 and a broad peak at around 486 cm –1 . The first peak corresponds to the well-documented nanocrystalline Si, − which is strongly red-shifted with respect to the bulk crystalline Si signal at 521 cm –1 . The broader signal at 486 cm –1 corresponds to amorphous Si, , confirming the presence of both crystalline and amorphous phases within the Si-NPs.…”

Section: Resultsmentioning

confidence: 95%

“…The first peak corresponds to the well-documented nanocrystalline Si, − which is strongly red-shifted with respect to the bulk crystalline Si signal at 521 cm –1 . The broader signal at 486 cm –1 corresponds to amorphous Si, , confirming the presence of both crystalline and amorphous phases within the Si-NPs. We also confirm that the sample is oxide-free, since we observe no features related to silica oxide , in any of the Raman spectra.…”

Section: Resultsmentioning

confidence: 95%

Band-Gap Tunability in Partially Amorphous Silicon Nanoparticles Using Single-Dot Correlative Microscopy

Huang

Tang

Laan

et al. 2020

ACS Appl. Nano Mater.

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Silicon nanoparticles (Si-NPs) represent one of many types of nanomaterials, where the origin of emission is difficult to assess due to a complex interplay between the core and surface chemistry. Band-gap tunability in Si-NPs is predicted to span from the infrared to the ultraviolet spectral range, which is rarely observed in practice. In this work, we directly assess the size dependence of the optical band gap using a single-dot correlative microscopy tool, where the size of the individual NPs is measured using atomic force microscopy (AFM) and the optical band gap is evaluated from single-dot photoluminescence measured on the very same NPs. We analyze 2–8 nm alkyl-capped Si-NPs prepared by a sol–gel method, followed by annealing at 1300 °C. Surprisingly, we find that the optical band gap is given by the amorphous shell, as evidenced by the convergence of the optical band gap size dependence toward the amorphous Si band gap of ∼1.56 eV. We propose that the structural disorder might be the reason behind the often reported limited emission tunability from various Si-NPs in the literature. We believe that our message points toward a pressing need for development and broader use of such direct correlative single-dot microscopy methods to avoid possible misinterpretations that could arise from attempts to recover size–band gap relation from ensemble methods, as practiced nowadays.

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“…Hydrogenated intrinsic polysilicon film can reduce the cost of optoelectronics device significantly. The prospects of intrinsic polysilicon films for thin-film solar cell and other optoelectronic device fabrication using hot wire chemical vapor deposition (HWCVD) were well evaluated [1]. The intrinsic silicon film requires controlled doping to make the films suitable for optoelectronic device application.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Hossion¹,

Arora

2020

Crystals

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Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

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Hydrogenated Nanocrystalline Silicon Thin Films Prepared by Hot-Wire Method with Varied Process Pressure

Cited by 25 publications

References 50 publications

A Comparison between Thin-Film Transistors Deposited by Hot-Wire Chemical Vapor Deposition and PECVD

A Comparison between Thin-Film Transistors Deposited by Hot-Wire Chemical Vapor Deposition and PECVD

Band-Gap Tunability in Partially Amorphous Silicon Nanoparticles Using Single-Dot Correlative Microscopy

Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

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