Hydrogenated Silicon Carbide Thin Films Prepared with High Deposition Rate by Hot Wire Chemical Vapor Deposition Method

Abstract

Structural, optical, and electrical properties of hydrogenated silicon carbide (SiC:H) films, deposited from silane (SiH4) and methane (CH4) gas mixture by HW-CVD method, were investigated. Film properties are carefully and systematically studied as function of deposition pressure which is varied between 200 mTorr and 500 mTorr. The deposition rate is found to be reasonably high (9.4 nm/s<rd<15.54 nm/s). Formation of SiC:H films is confirmed by FTIR, Raman, and XPS analysis. XRD and Raman analysis revealed that with increasing deposition pressure amorphization occurs in SiC:H films. FTIR spectroscopy analysis shows that bond density of C–H decreases while Si–C and Si–H bond densities increase with increasing deposition pressure. Total hydrogen content increases with increasing deposition pressure and was found to be <20 at.%. The absence of band ~1300–1600 cm−1in the Raman spectra implies negligible C–C bond concentration and formation of nearly stoichiometric SiC:H films. The band gap shows increasing trend with increasing deposition pressure. The high value of Urbach energy suggests increased structural disorder in SiC:H films. Finally, it has been concluded that CH4can be used as effective carbon source in HW-CVD method to prepare stoichiometric SiC:H films.

Evolution in the Electronic Structure of Polymer‐derived Amorphous Silicon Carbide

“…It is seen that the bandgap decreases with pyrolysis temperature, with a sudden change between 1100°C and 1200°C. Studies on a ‐SiC thin films synthesized by vapor deposition revealed that the bandgap of this type of material can be drastically affected by Si:C ratio and hydrogen concentration: increasing carbon concentration leads to an increase in the bandgap; and hydrogen can also widen the bandgap . Previous study on the network structure of this a ‐SiC revealed that the material does contain a small amount of extra carbon more than the necessary to form stoichiometric SiC within the Si‐containing phase.…”

“…Studies on a-SiC thin films synthesized by vapor deposition revealed that the bandgap of this type of material can be drastically affected by Si:C ratio and hydrogen concentration: increasing carbon concentration leads to an increase in the bandgap; 28,36,37 and hydrogen can also widen the bandgap. 38,39 Previous study 24 on the network structure of this a-SiC revealed that the material does contain a small amount of extra carbon more than the necessary to form stoichiometric SiC within the Si-containing phase. However, the concentration of the carbon and the composition of the samples remained the constant within the testing temperature range, 24 indicating the bandgap change was not from the decrease in the carbon concentration.…”

Improvement of corrosion resistance and mechanical properties of chrome plating by diamond-like carbon coating with different silicon-based interlayers

“…The silicon dioxide and suboxides, including Si 2 O, SiO, Si 2 O 3 and SiO 2 , correspond to +1, +2, +3, and +4 oxidation states, respectively. In addition, the a-Si x C y :H interlayer also exhibits the Si-C peak with a binding energy of ∼100.3 eV, as shown in figure 4(d), which means that the carbon dopant can be bound to the silicon core atoms [34]. In the a-Si:N interlayer, the nitrogen dopant atoms are not bonded to the silicon atoms but are located between the silicon structures, which is consistent with the XPS spectra of the N1s peak, as shown in the inset of figure 4(b).…”

The influence of support composition on the activity of Cu:Ce catalysts for selective catalytic reduction of NO by CO in the presence of excess oxygen

“…[58][59][60] The peaks at 530.2 and 532.5 eV in the SiC supported catalyst are attributed to the low-coordinated and high coordinated O-Si, respectively, while the peak located at 531.6 eV belongs to the O-Si-C bond. [61][62][63] It was found that the main type of functional group for the Cu1:Ce3/CNT and Cu1:Ce3/AC catalysts was OQC-O. Existence of abundant surface oxygen groups in AC leads to the decreased hydrophobicity of carbon, ion-exchange capability, and electronic properties.…”