Hydrogenation effect of InGaP grown on GaAs by molecular beam epitaxy

Abstract

Hydrogenation effects on electrical properties of n-type and undoped InGaP epi layers lattice matched to GaAs was investigated. It was found that the hydrogenation under a proper condition can be resulted in a Auh-InGaP Schottky diode with a good rectifying characteristics as well as an effective defect passivation. These improvement were thought to be resulted from the atomic hydrogen diffused into InCaP neutralized Si donor and passivated recombination centers near the surface.

Accurate Extraction of Schottky Barrier Height and Universality of Fermi Level De‐Pinning of van der Waals Contacts

“…The Schottky barrier height (SBH) at the metal‐semiconductor interface plays a key role in determining the contact resistance. In an ideal contact interface, the SBH () is given by the difference between the metal work function ( W m ) and the semiconductor electron affinity (χ s ), as predicted by the Schottky‐Mott rule [ 5 ] : However, in a real scenario, the interfacial dipole, metal induced gap states (MIGS), and interfacial defects lead to Fermi level pinning (FLP), [ 6–8 ] which has plagued the development of ultra‐low resistance contacts for several materials, including n‐Ge, [ 9,10 ] p‐InGaAs, [ 11,12 ] and p‐MoS 2 . [ 13–17 ]…”

“…However, in a real scenario, the interfacial dipole, metal induced gap states (MIGS), and interfacial defects lead to Fermi level pinning (FLP), [6][7][8] which has plagued the development of ultra-low resistance contacts for several materials, including n-Ge, [9,10] p-InGaAs, [11,12] and p-MoS 2 . [13][14][15][16][17] In the context of the layered semiconductors, the possibility of ultra-clean, atomically smooth, dangling-bond-free surface, coupled with a relatively weak van der Waals (vdW) interaction at the interface reignited the hope to achieve a completely de-pinned contact close to the Schottky-Mott limit.…”