Hydrogenation of HgCdTe epilayers on Si substrates using glow discharge plasma

Golding, T. D.; Hellmer, R. P.; Bubulac, L. O.; Dinan, J. H.; Wang, L.; Zhao, Wei; Carmody, M.; Sankur, H.; Edwall, D. D.

doi:10.1007/s11664-006-0285-8

Cited by 12 publications

(2 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[4] and [5]). Some data are available on electrical properties of HgCdTe grown on Si, but the effect of defects specific to the substrate on these properties is not well understood [6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Defect structure of HgCdTe films grown by molecular beam epitaxy on Si substrates

Іжнін¹,

Izhnin²,

Savytskyy³

et al. 2012

Semicond. Sci. Technol.

View full text Add to dashboard Cite

An ion milling-assisted study of defect structure of HgCdTe films grown by molecular beam epitaxy on Si substrates was performed. The films appeared to contain initially neutral Te-related defects with concentration of 10 17 cm −3 , typical of HgCdTe. The concentration of residual donors was found to be quite low ((3-8) × 10 14 cm −3 ). Specific to HgCdTe/Si technology appeared to be a considerable number of stacking faults, which affected the carrier mobility in n-type material. These defects can be annealed in He atmosphere at 230 • C, and after ion milling the electrical parameters of n-type HgCdTe/Si films approach those of high-quality bulk crystals.

show abstract

Section: Introductionmentioning

confidence: 99%

Defect structure of HgCdTe films grown by molecular beam epitaxy on Si substrates

Іжнін¹,

Izhnin²,

Savytskyy³

et al. 2012

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…1 It has been demonstrated that this higher dislocation level results in lower device performance, especially in the LWIR regime. 2 There is ongoing effort within the community to either reduce dislocations in HgCdTe/Si or render the dislocations electrically inactive, [3][4][5][6] but to date no single approach yields material with dislocation density values or device performance similar to those of HgCdTe grown on bulk lattice-matched substrates. Without use of scalable and relatively inexpensive substrates, the development of third-generation IRFPAs using Hg-based compounds is severely hindered as large format sizes and cost are major drivers for future systems.…”

Section: Introductionmentioning

confidence: 99%

Study of HgCdSe Material Grown by Molecular Beam Epitaxy

Brill

Chen

Wijewarnasuriya

2011

Journal of Elec Materi

View full text Add to dashboard Cite

Much progress has been made in developing high-quality HgCdTe/Si for largearea focal-plane array (FPA) applications. However, even with all the material advances made to date, there is no guarantee that this technology will be mature enough to meet the stringent FPA specifications required for longwavelength infrared (LWIR) systems. With this in mind, the Army Research Laboratory (ARL) has begun investigating HgCdSe material for infrared (IR) applications. Analogous to HgCdTe, HgCdSe is a tunable semiconductor that can detect any wavelength of IR radiation through control of the alloy composition. In addition, several mature, large-area bulk III-V substrates are nearly lattice matched to HgCdSe, giving this system a possible advantage over HgCdTe, for which no scalable, bulk substrate technology exists. We have initiated a study of the growth of HgCdSe using molecular beam epitaxy (MBE). Growth temperature and material flux ratios were varied to ascertain the best growth conditions. Smooth surface morphology has been achieved using a growth temperature much lower than that used for HgCdTe. Additionally, zero void defects were nucleated at these lower temperatures. Preliminary data suggest a linear relationship between the Se/Cd flux ratio used during growth and the cutoff wavelength as measured by Fourier-transform infrared (FTIR) spectroscopy.

show abstract

The Distribution Tail of LWIR HgCdTe-on-Si FPAs: a Hypothetical Physical Mechanism

Bubulac

Benson

Jacobs

et al. 2011

Journal of Elec Materi

Self Cite

View full text Add to dashboard Cite

A model is proposed to explain disparities found in the operability values and histograms for long-wavelength infrared HgCdTe focal-plane arrays fabricated on Si substrates compared with those fabricated on CdZnTe. The starting point for the model is the close agreement between the aerial density of discrete species (particles, contamination spots, crystalline defects on Si surface) in various interfaces in the HgCdTe/CdTe/Si structure and the density of failed pixels in the array. The density of discrete species is acquired by applying a newly developed variation of the secondary-ion mass spectrometry (SIMS) depth-profiling technique to samples that have been deuterated to enhance detection. A mechanism of selective activation of threading dislocations in a HgCdTe layer on Si is proposed to link discrete species with failed detector pixels.

show abstract

Hydrogenation of HgCdTe epilayers on Si substrates using glow discharge plasma

Cited by 12 publications

References 10 publications

Defect structure of HgCdTe films grown by molecular beam epitaxy on Si substrates

Defect structure of HgCdTe films grown by molecular beam epitaxy on Si substrates

Study of HgCdSe Material Grown by Molecular Beam Epitaxy

The Distribution Tail of LWIR HgCdTe-on-Si FPAs: a Hypothetical Physical Mechanism

Contact Info

Product

Resources

About