“…Among organotin-based resists, the Sn dodecamer with the general formula [(RSn) 12 O 14 (OH) 6 ]X 2 (R = alkyl ligand, X = hydroxide, chloride, carboxylate) has attracted considerable attention. − , Researchers have also investigated other systems such as a sodium-centered butyltin Keggin, ,, butylhydroxooxostannane, and hexameric organotin carboxylates. , The generally accepted patterning mechanism for these materials initiates with radiolysis of the Sn–C bond under vacuum followed by hydrolysis and condensation reactions in air leading to a tin oxide framework that dissolves more slowly than the unexposed resist. ,,,, Consequently, differential dissolution rates between unexposed and exposed regions of the resist are predicated on the controlled radiolysis of the Sn–C bond. Severe dehydration upon baking and intercluster polymerization via radiation-induced cross-coupling of the organo ligands have also been suggested as contributors to differential dissolution rates and contrast. ,, While the proposed mechanisms describe the basic performance of organotin resists, many details about the chemistry after exposure remain uncertain. This work focuses on this postexposure chemistry.…”