Hydrophilic low-temperature direct wafer bonding

Ventosa, C.; Rieutord, F.; Libralesso, L.; Morales, Christophe; Fournel, Frank; Moriceau, H.

doi:10.1063/1.3040701

Cited by 104 publications

(72 citation statements)

References 14 publications

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“…The peaks at around 3400-3500 cm À1 correspond to bound H 2 O by hydrogen bond to silanol groups. 12 It suggests that some water molecules are still remaining at the bonding interfaces after 24 h storage. Furthermore, comparing the two spectra, the amount of water molecules remaining at the bonding interface prepared by (O 2 þ CF 4 ) plasma treatment is fewer than those by O 2 plasma treatment.…”

Section: Resultsmentioning

confidence: 99%

Room-Temperature Direct Bonding Using Fluorine Containing Plasma Activation

Wang

Suga

2011

J. Electrochem. Soc.

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Room-temperature Si/Si wafer direct bonding has been achieved successfully without wet chemistry treatment as well as no requiring annealing. Very strong bonding strength of Si/Si pairs, close to the bulk-fracture strength of silicon, is demonstrated at room temperature thanks to adding small amount of carbon tetrafluoride (CF 4 ) into oxygen plasma treatment. The surface energies of bonded Si/Si wafer pairs were influenced by plasma treatment parameters. Moreover, the wafer surfaces and the bonding interfaces are analyzed to explore the bonding mechanism. Adding small amount of CF 4 into O 2 plasma does not etch the Si surface in a short time ($60 s), but it renders fluorinated oxide grown on the Si surface, which should be less hydrophilic than the surface treated by O 2 plasma. Therefore, fewer water molecules at bonding interface may be prone to produce many covalent bonds via polymerization reaction and result in strong bonding at room temperature.

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Section: Resultsmentioning

confidence: 99%

Room-Temperature Direct Bonding Using Fluorine Containing Plasma Activation

Wang

Suga

2011

J. Electrochem. Soc.

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“…Tribological properties (friction, adhesion, and wear) of silica are of significant importance for a number of technological applications, including wafer bonding in nanoengineering of semiconductor devices [1,2] and wafer planarization for manufacturing of the microelectromechanical systems (MEMS) [3]. Friction and adhesion of silica are also of fundamental interest for geophysics and earthquake mechanics, since quartz is a common component of rocks and shallow tectonic earthquakes are known to result from frictional instabilities in crustal faults [4,5].…”

Section: Introductionmentioning

confidence: 99%

Effects of Interfacial Bonding on Friction and Wear at Silica/Silica Interfaces

Liu

Szlufarska

2014

Tribol Lett

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Static friction between amorphous silica surfaces with a varying number of interfacial siloxane (Si-O-Si) bridges was studied using molecular dynamic simulations. Static friction was found to increase linearly with the applied normal pressure, which can be explained in the framework of Prandlt-Tomlinson's model. Friction force was found to increase with concentration of siloxane bridges, but with a decreasing gradient, with the latter being due to interactions between neighboring siloxane bridges. In addition, we identified atomic-level wear mechanisms of silica. These mechanisms include both transfer of individual atoms accompanied by breaking interfacial siloxane bridges and transfer of atomic cluster initialized by rupturing of surface Si-O bonds. Our simulations showed that small clusters are continually formed and dissolved at the sliding interface, which plays an important role in wear at silica/silica interface.

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“…In the bonding structure, the alumina compressive stress can hardly induce debonding because of stiffener effect of both silicon substrate. If we care about direct bonding mechanism, 15,25,26 it is known that hydrogen can be generated during silicon oxydation by trapped water at bonding interface. One possible interpretation would be the following : as soon as the water reaches the silicon, it starts to oxidize it, interfaces adherence between alumine and silicon susbtrate is then degraded.…”

Section: Resultsmentioning

confidence: 99%

“…Noteworthy, the cleaning process on silicon surface leads to a thin chemical oxide formation: around 0.7 nm. 15 This thin oxide will be called here SiO 2 (ch). In this study, three bonding configurations are studied: Si/Al 2 O 3 , SiO 2 /Al 2 O 3 and Al 2 O 3 /Al 2 O 3.…”

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Direct Bonding Mechanism of ALD-Al₂O₃Thin Films

Beche

Fournel

Larrey

et al. 2015

ECS J. Solid State Sci. Technol.

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Direct bonding mechanism of amorphous ALD alumina has been investigated from room temperature up to 1200 • C. By considering the evolution with temperature of free alumina surfaces and bonded configuration we highlight strong interaction between oxidant species and defect generation through interfacial oxidation. In the first case, the combination of internal stress and adhesion loss by dry O 2 oxidation results in blister formations, whereas in the case of bonding structures, wet oxidation with H 2 production at Silicon-Alumina interfaces explains void formation. Based on these established mechanisms we provide insights on alumina layer integration within a large temperature range. © The Author Direct bonding is used to join two mirror-polished wafers without any additional material. This technique has proven to be a powerful assembly strategy and found extensive application in microelectronics, MEMS and optoelectronic device fabrication. In particular, direct bonding has enabled the emergence of Silicon-On-Insulator (SOI) based technologies. For many reasons including processing convenience, good electrical and thermo-mechanical behavior, SiO 2 appeared from the beginning as an ideal candidate as buried insulating material and also for as bonding material. SiO 2 SOI structures promote many advantages such as the improvement of device switching speed and power consumption or even parasitic capacitance. Recently, with device scale reduction, SiO 2 material has shown some limitations such as notable leakage current or self-heating that affects next generation devices. In this context, one possible alternative would be the replacement of SiO 2 by a better candidate.1-3 The consideration of the comprise between thermal and electrical properties has already pointed out different materials such as diamond, Al 2 O 3 , HfO 2 or Si 3 N 4 .1 Among these materials, alumina thin film appears as a credible candidate replacement of buried SiO 2 with suitable electrical (ρ = 10 12 -10 14 .cm) and thermal (thermal conductivity = 0.3-30 W.m −1 .K −1 ) properties. In addition, bonding feasibility was already demonstrated in the past. [4][5][6][7] Recently with the emergence of III-V-OI substrates at low bonding temperature, ALD-Al 2 O 3 thin film found new outlooks. Indeed the improvement of interface quality between III-V substrates and ALD-Al 2 O 3 layers in comparison with SiO 2 layer (lower interface roughness) results in better performance in specific configuration. 8,9 Moreover, direct wafer bonding using the high-k dielectric material provides a better mechanical assembly, much stronger than deposited SiO 2 within the low temperature range.10,11 Nevertheless recent works pointed out numerous defect generations at higher thermal required for other devices and integration scheme typically T ≤ 600• C. 12,13 The defect apparition, and resulting debonding, alters its fabrication and its performance. In this paper we focus on these defects within a wide temperature range [RT to 1200• C]. We conduct a comparative analysis betwee...

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Hydrophilic low-temperature direct wafer bonding

Cited by 104 publications

References 14 publications

Room-Temperature Direct Bonding Using Fluorine Containing Plasma Activation

Room-Temperature Direct Bonding Using Fluorine Containing Plasma Activation

Effects of Interfacial Bonding on Friction and Wear at Silica/Silica Interfaces

Direct Bonding Mechanism of ALD-Al₂O₃Thin Films

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Hydrophilic low-temperature direct wafer bonding

Cited by 104 publications

References 14 publications

Room-Temperature Direct Bonding Using Fluorine Containing Plasma Activation

Room-Temperature Direct Bonding Using Fluorine Containing Plasma Activation

Effects of Interfacial Bonding on Friction and Wear at Silica/Silica Interfaces

Direct Bonding Mechanism of ALD-Al2O3Thin Films

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Direct Bonding Mechanism of ALD-Al₂O₃Thin Films