Perovskite solar cells (PSCs) have
attracted tremendous interest
due to their outstanding intrinsic photovoltaic properties, such as
absorption coefficients, exciton binding energies, and long carrier
lifetimes. Although the power conversion efficiency (PCE) of PSCs
is close to the Si solar cells’ PCE, device stability remains
a challenge. In particular, the device stability is more critical
in n-i-p normal structured PSCs, which show a higher efficiency than
p-i-n inverted ones, simply because of the much lower stability of
2,2′,7,7′-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9′-spirobifluorene (Spi). To
prevent the devices from degrading performances arising both from
perovskite’s degradation and Spi instability, we prepare atomic
layer deposition (ALD)-grown transition metal oxides for hole transport
with efficient n-i-p PSCs. We demonstrate low-temperature (T
dep = 45 °C)-grown amorphous ALD-V2O5–x
with oxygen-deficient
traps on top of Spi as an interlayer, which prevents the devices’
degradation in performance. By blocking moisture and oxygen, ALD-V2O5–x
was able to greatly
improve the devices’ stability by preserving the photovoltaic
α-FAPbI3 phase while suppressing both Li ion diffusion
from the additive and Au ions from the electrode. As a result, we
successfully fabricate PSCs with passivation/hole-transporting bifunctional
Spi/ALD-V2O5–x
interlayers
without sacrificing photovoltaic performances, and the device stability
is significantly improved.