2010
DOI: 10.1016/j.cplett.2010.10.004
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Hydrophobic to hydrophilic transition of HF-treated Si surface during Langmuir–Blodgett film deposition

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Cited by 32 publications
(20 citation statements)
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“…LB films of mixed monolayer were grown on hydrophilic native oxide-covered Si and hydrophobic H-terminated Si in one (up) and two (down–up) strokes, respectively, at a surface pressure (π) of ≈30 mN/m. As native oxide is polar in nature, 33 deposition was made in upstroke (one stroke) sequence starting from the bottom of water subphase. In contrast, we followed reverse sequence, that is, down–up (two strokes) for apolar H-terminated Si.…”
Section: Results and Discussionmentioning
confidence: 99%
“…LB films of mixed monolayer were grown on hydrophilic native oxide-covered Si and hydrophobic H-terminated Si in one (up) and two (down–up) strokes, respectively, at a surface pressure (π) of ≈30 mN/m. As native oxide is polar in nature, 33 deposition was made in upstroke (one stroke) sequence starting from the bottom of water subphase. In contrast, we followed reverse sequence, that is, down–up (two strokes) for apolar H-terminated Si.…”
Section: Results and Discussionmentioning
confidence: 99%
“…Generally, the SiH bond is hydrophobic and the SiN bond is hydrophilic due to its polarity and can react with water . Due to the quick reaction of SiNHSi with water in air, the content of the SiN moiety decreases quickly to be replaced by SiO bonds, whereas the reaction of SiH with oxygen is slow and needs a high temperature.…”
Section: Resultsmentioning
confidence: 99%
“…It is known that hydrophilicity of Si originating from the presence of singular and associated OH groups on its surface could be obtained by boiling it in an H 2 O 2 solution at 100 • C for several minutes (Bal et al 2010b). In contrast, the hydrophobic Si surface state, mainly characterized by Si-H or Si-O-CH 3 groups, could be obtained by wet chemical treatment involving HF acid or photoresists (Grundner and Jacob 1986, Bal et al 2010a, 2010b. UV lasers have also been used to induce chemical or thermal dissociation and adsorption of different gases (methanol, water vapour, etc) on the Si surface (Koehler et al 1989, Tanaka et al 1993.…”
Section: Introductionmentioning
confidence: 99%