Hydrostatic-pressure coefficient of the direct band-gap energy ofAlxGa1−xAsf

Effects of hydrostatic pressure on the electron g_{\parallel } factor andg-factor anisotropy in GaAs–(Ga, Al)As quantum wells under magnetic fields

“…The effects of the applied hydrostatic pressure on the electron g factor are considered through the hydrostatic-pressure dependences of the different energy gaps and interband matrix elements in the corresponding material [24]. For bulk Ga 1−x Al x As it has been proven that the fundamental gap E g is a growing linear function of the hydrostatic pressure, for which the slope (pressure coefficient) is positive and independent of the aluminum concentration at low temperatures [30]. The split-off valence gap 0 , however, does not depend on the hydrostatic pressure [31].…”

Effects of hydrostatic pressure and aluminum concentration on the conduction-electrongfactor in GaAs-(Ga,Al)As quantum wells under in-plane magnetic fields

“…18 In III-V bulk materials, the properties of the electron Landé g factor may be investigated within the k • p framework. [1][2][3][4]9 According to this procedure, the behavior of the Landé g factor in Ga 1−x Al x As, as a function of hydrostatic pressure ͑P͒ and aluminum concentration ͑x͒, is determined by the dependency of the fundamental gaps [19][20][21][22][23][24] and interband transitionmatrix elements 9 as functions of P and x. In a QW, however, the electron Landé factor must be studied by taking into account the barrier-confinement effects on the electron localization properties as well as the anisotropy and nonparabolicity of the conduction band.…”

Band-gap shift in heavily dopedn-typeAl0.3Ga0.7Asalloys

“…1-20 Most of these investigations were directed towards the information extracted from the optical properties, such as, e.g., carrier effective masses, energy gap, donor and acceptor binding energies, 4,8,[10][11][12]20 Hall measurements, 13 DX centers, 4,7,14 excitonic states, 15,16 dense electron-hole systems, 17 hydrostatic pressure, 18 and temperature dependence of the energy gap. 5 However, neither experimental nor theoretical efforts have been much devoted to investigate the band-gap shift ͑BGS͒, caused by heavy doping of Al x Ga 1Ϫx As alloys.…”