Hydrostatic pressure coefficients of the photoluminescence of InAs/GaAs quantum dots

Energy Levels in a Single-Electron Quantum Dot with Hydrostatic Pressure

“…Previous work has been done on the effects of hydrostatic pressure on the energy behavior of quantum dots with multiple electrons, with the use of different geometries [8][9][10][11][12][13][14][15][16][17][18][19]. Photoluminescence measurement under high hydrostatic pressure has proven to be a useful tool for exploring the electronic structure and optical transitions in quantum dots [20,21]. Zhou et al [22] report an experimental study on the optical properties of the self-organized 1.55 nm InAs/InGaAsP/InP quantum dots under hydrostatic pressure up to 9.5 GPa at 10 K. Duque et al [9], Segovia and Vinck-Posada [23] consider the implications of hydrostatic pressure and temperature on the defect mode in the band structure of a one-dimensional photonic crystal.…”

“…Previous work has been done on the effects of hydrostatic pressure on the energy behavior of quantum dots with multiple electrons, with the use of different geometries [8][9][10][11][12][13][14][15][16][17][18][19]. Photoluminescence measurement under high hydrostatic pressure has proven to be a useful tool for exploring the electronic structure and optical transitions in quantum dots [20,21]. Zhou et.…”

Hydrostatic pressure effects on the impurity states in InAs/GaAs coupled quantum dots

“…The hydrostatic pressure coefficients of the electron states in InAs/GaAs pyramid QDs were investigated [11]. The effect of shape on the strain-modified electron/hole confinement potential in InAs/GaAs QDs was also been studied [12].…”

Pressure dependence of photoluminescence of InAs/InP self‐assembled quantum wires

“…They have been widely used for the study of quantum wells [6] and, more recently, of QDs [7,8]. Self-assembled InAs quantum dots on GaAs have been studied under pressure [7][8][9] but, to the best of our knowledge, there are not pressure studies on InAs quantum wires.…”