Hydrostatic-Pressure Deep Level Transient Spectroscopy Study of the Heteroantisite Antimony Level in GaAs

Abstract

We present some preliminary results of the first hydrostatic-pressure study of the electronic level related to the Sb-heteroantisite defect in GaAs. We studied two kinds of n-type GaAs samples doped with antimony: bulk samples grown by liquid encapsulated Czochralski method and thin layers grown by metalorganic chemical vapour deposition technique. We found strongly nonlinear pressure dependence of the activation energy of the emission rate for the level. Moreover, the results obtained for the bulk material were fairly different from those obtained for thin metalorganic chemical vapour deposition layers. The possible explanation of this difference is presented.PACS numbers: 71.55.Eq, 62.50.-p Antisite-type defects are very important and interesting point defects in III-V semiconductors. The best known defect of such a type is EL2 in GaAs. Recently some works on antimony heteroantisite defect in GaAs have been published [1][2][3][4][5][6]. It has been shown that such a defect has a donor level about 0.5 eV below the conduction band edge of GaAs. We performed the first measurements of the hydrostatic pressure dependence of the SbG a (0/+) level activation energy in order to compare it with the pressure coefficient of EL2.