2004
DOI: 10.1063/1.1829388
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Hydrostatic-pressure dependence of organic thin-film transistor current versus voltage characteristics

Abstract: We report results of electrical output and transfer characteristics for two top-contact pentacene thin-film transistors under hydrostatic pressure at room temperature. Strong reversible increases of the drain current and the field-effect hole mobility with increasing pressure were observed, in particular for a device with relatively low current at atmospheric pressure.

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Cited by 27 publications
(13 citation statements)
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“…Pressure also affects the crystal structure and the vibrational spectra, which inevitably modifies μ . Strong reversible increases of the drain current and the field‐effect hole mobility with increasing pressure (up to 300 MPa) were observed for pentacene OFETs, in particular, for a device with a relatively low current . Similar nearly‐linear increase of the mobility with pressure (up to 500 MPa) was observed for rubrene .…”
Section: Towards Advanced Modeling Of Charge Transportsupporting
confidence: 68%
“…Pressure also affects the crystal structure and the vibrational spectra, which inevitably modifies μ . Strong reversible increases of the drain current and the field‐effect hole mobility with increasing pressure (up to 300 MPa) were observed for pentacene OFETs, in particular, for a device with a relatively low current . Similar nearly‐linear increase of the mobility with pressure (up to 500 MPa) was observed for rubrene .…”
Section: Towards Advanced Modeling Of Charge Transportsupporting
confidence: 68%
“…[251] The sensitivity of films of 22 to a variety of analytes have led to their use as sensors. [252] Changes in pentacene device mobility as a function of applied external pressure [253] has been used to create mechanical force and pressure sensors, [254] as well as conformable pressure sensors. [255] Pentacene monolayers were found to improve wetting and crystallinity of subsequently deposited C 60 layers, leading to improved performance of fullerene transistors (electron mobility up to 2 cm 2 V À1 s À1 ).…”
Section: Methodsmentioning
confidence: 99%
“…Recently, we reported a method of measuring the effects of hydrostatic pressure on charge carrier conductivity in organic semiconductor crystals, introducing the charge by the application of an electric field at the semiconductor surface [20,21]. In addition to the measurement of a commonly used transfer characteristic (the drain current, I D ) as a function of gate voltage (V G ) reported in prior studies [22][23][24], we performed four-terminal conductivity measurements to exclude the external influence of metal-to-semiconductor contact resistance. Moreover, we simultaneously measured the Hall coefficient to ensure calculation of the correct pressure coefficient when estimating the change in the dielectric capacitance and the thickness of the gate dielectric insulators, thus providing a means of studying the so-called"structure-property" relationships.…”
Section: Charge Coherence In High-performance Organic Transistorsmentioning
confidence: 99%