Hydrostatic pressure effects on the Γ–X conduction band mixing and the binding energy of a donor impurity in GaAs–Ga1–xAlxAs quantum wells

Duque, C.A.; López, Sonia

doi:10.1002/pssb.200642377

Cited by 30 publications

(9 citation statements)

References 20 publications

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“…Many authors have studied the effect of the Γ– X crossover on the optical properties associated with excitons and impurities in GaAs QW and InAs/GaAs self‐assembled QD 16–26. The studies have shown a good agreement with experimental results for the pressure coefficient of the photoluminescence peak transitions.…”

Section: Introductionmentioning

confidence: 79%

Shallow-donor impurity in coupled GaAs/Ga1−xAlxAs quantum well wires: hydrostatic pressure and applied electric field effects

Tangarife

Duque

2010

phys. stat. sol. (b)

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In this work we study the binding energy of the ground state for hydrogenic donor impurity in laterally coupled GaAs/ Ga 1Àx Al x As double quantum well wires, considering the effects of hydrostatic pressure and under the influence of a growthdirection applied electric field. We have used a variational method and the effective mass and parabolic band approximations. The low dimensional structure consists of two quantum well wires with rectangular transversal section coupled by a central Ga 1Àx Al x As barrier. In the study of the effect of hydrostatic pressure, we have considered the G -X crossover in the Ga 1Àx Al x As material, which is responsible for the reduction of the height of the confining potential barriers. Our results are reported for several sizes of the structure (transversal sections of the wires and barrier thickness), and we have taken into account variations of the impurity position along the growth-direction of the heterostructure, together with the influence of applied electric fields. The main findings can be summarized as: (i) for symmetric quantum-well wires (QWW) the binding energy is an even function of the growth-direction impurity position and this even symmetry breaks in the case of asymmetric structures; (ii) the coupling between the two parallel wires increases with the hydrostatic pressure due to the negative slope of the confinement potential as a function of pressure; (iii) for impurities in the central barrier the binding energy is an increasing function of the hydrostatic pressure; (iv) depending on the direction of the applied electric field and the fixed impurity position, the binding energy can behave as an increasing or decreasing step function of the applied electric field, and finally (v) for appropriate values of the wires and barrier widths the results reproduce the exact limits of 2D and 3D hydrogenic atom as well as the limits of finite and infinite potential barrier quantum wells.

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Section: Introductionmentioning

confidence: 79%

Shallow-donor impurity in coupled GaAs/Ga1−xAlxAs quantum well wires: hydrostatic pressure and applied electric field effects

Tangarife

Duque

2010

phys. stat. sol. (b)

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“…This may result in modifications of the interband optical transitions in GaAs-based QW's (see Ref. [1], and references therein).…”

Section: Introductionmentioning

confidence: 99%

Hydrostatic Pressure and Magnetic Field Effects on the Exciton States in Vertically Coupled GaAs-(Ga,Al)As Quantum Dots

Aguilar¹,

López²,

Duque³

2008

PIERS Online

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The variational procedure, in the effective-mass and parabolic-band approximations, is used in order to investigate the combined effects of hydrostatic pressure and in-planedirection-applied magnetic field on the exciton states in vertically coupled GaAs-(Ga, Al) As quantum dots. Calculations are performed for two cylindrical-shape quantum dots. The exciton envelope wave function is obtained through a variational procedure using a hydrogenic 1 s-like wave function and an expansion in a complete set of trigonometric functions for the electron and hole wave functions. The anticrossing effects on the dispersion with applied magnetic field and hydrostatic pressure of the photoluminescence peaks associated with direct and indirect excitons have been considered.

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“…P = The dependencies of the input parameters with P used in the calculation are directly taken from the table listed in Ref. [14] 3 Results and discussion In the calculation of the energy level structure the background impurity density is kept fixed at …”

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confidence: 99%

Study of the electronic properties of GaAs‐based atomic layer doped field effect transistor (ALD‐FET) under the influence of hydrostatic pressure

Martı́nez-Orozco

Rodrı́guez-Vargas

Duque

et al. 2009

Physica Status Solidi (b)

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A new generation of high frequency 3D deflection technique opens up manifold possibilities for a wider application of electron beam (EB) technologies for surface treatment. A high flexibility of process parameters connected with high productivity is obtained from the simultaneous interaction of the EB in several processing areas or by carrying out several processes simultaneously. The change of material and component‐specific surface properties can be adapted as required. An outstanding improvement of properties can be reached. Typical technological characteristics are explained and the influence of EB parameters on microstructure and properties is discussed. It has been shown that the EB is becoming more and more attractive and important for industrial applications of thermal surface technologies such as hardening, combined thermochemical treatment/hardening, remelting, surface alloying and dispersing

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Hydrostatic pressure effects on the Γ–X conduction band mixing and the binding energy of a donor impurity in GaAs–Ga_1–xAl_xAs quantum wells

Cited by 30 publications

References 20 publications

Shallow-donor impurity in coupled GaAs/Ga1−xAlxAs quantum well wires: hydrostatic pressure and applied electric field effects

Shallow-donor impurity in coupled GaAs/Ga1−xAlxAs quantum well wires: hydrostatic pressure and applied electric field effects

Hydrostatic Pressure and Magnetic Field Effects on the Exciton States in Vertically Coupled GaAs-(Ga,Al)As Quantum Dots

Study of the electronic properties of GaAs‐based atomic layer doped field effect transistor (ALD‐FET) under the influence of hydrostatic pressure

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