Hydrostatic pressure, electric and magnetic field effects on shallow donor impurity states and photoionization cross section in cylindrical GaAs–Ga_1–xAl_x As quantum dots

Abstract

Fullerene nanowire arrays with well‐defined size and length have been prepared by a controllable technique. Fullerene molecules such as C60 are introduced into the pores of anodic aluminum oxide (AAO) templates under a direct current (DC) electric field and polymerized in the pores. Structure analysis shows that the C60 nanowires are mainly polycrystalline, and a rhombohedral polymeric phase is observed in their vibration spectra. The electrical conductivity of so‐prepared nanowire arrays show a semiconducting behavior. The ability to fabricate the fullerene nanowire arrays with controlled structures represents an important step toward the development of chemical sensors and nanoscale electronic devices based on fullerenes.

Effect of Si δ -doped layer position on optical absorption in GaAs quantum well under hydrostatic pressure

“…The δ − doping semiconductors' quantum wells are very important for designing various optoelectronic devices based on optical intersubband transitions. Many research works have been developed theoretically and experimentally to investigate the behavior of optical properties in quantum wells, quantum wires and quantum dots [13][14][15][16][17][18][19][20][21][22][23][24][25]. Majority of provided results indicate that various factors such as δ − doping concentration, temperature, applied external electric field and hydrostatic pressure affect the electronic and optical properties of these semiconductor materials.…”

GaAs quantum well in the non-parabolic case: the effect of hydrostatic pressure on the intersubband absorption coefficient and the refractive index

“…This research developed for studying the behavior of optical properties in nanostructured materials [1][2][3][4][5][6][7]. Another idea in the progress of semiconductors is d-doping in quantum well materials.…”

A theoretical study of variation of photoionization cross section of donor impurities in a GaAs quantum dot of cylindrical geometry with incident photon frequency, donor location along the dot axis and applied uniaxial stress

“…Studies have been carried out on donor impurity binding energies in GaAs quantum wells [14,15], quantum well wires [16] and quantum dots [17][18][19]. Further work has seen the use of the binding energies to compute density of impurity states [9] and photoionization cross-sections [20][21][22][23][24][25][26] when the system is subjected to external constraints. In our previous work [26], we have studied the effect of Hermanson's spatial dielectric function, finite and infinite barrier potentials and axial lengths on the photoionization cross-section of a hydrogenic and a non-hydrogenic donor impurity in a GaAs quantum well dot (QWD) of circular cross-section.…”