Hydrothermal Growth of Large Sound Crystals of Zinc Oxide

Laudise, R.A.; Kolb, E.D.; Caporaso, A.J.

doi:10.1111/j.1151-2916.1964.tb14632.x

Cited by 230 publications

(114 citation statements)

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“…In consequence, Bragg reflections assigned to ZnSe are more intense than those of ZnO due to coagulation of small to larger size crystallites and increase of long-range order at lower temperatures of annealing in consistency with the results of ZnSe, ZnO, and doped ZnO crystallization from solutions [51][52][53].…”

Section: Kcn-etching Of Cu(inga)se 2 Surfacesupporting

confidence: 82%

Optimization of Electrochemically Deposited Highly Doped ZnO Bilayers on Ga-Rich Chalcopyrite Selenide for Cost-Effective Photovoltaic Device Technology

et al. 2016

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High quality polycrystalline bilayers of aluminium doped ZnO (Al:ZnO) were successively electrodeposited in the form of columnar structures preferentially oriented along the 1011 crystallographic direction from aqueous solution of zinc nitrate (Zn(NO 3 ) 2 ) at negative electrochemical potential of E C = (−0.8)-(−1.2) V and moderate temperature of 80 • C on gallium rich (30% Ga) chalcopyrite selenide Cu(In,Ga)Se 2 (CIGS) with chemically deposited ZnSe buffer (ZnSe/Cu(In,Ga)Se 2 /Mo/glass). The aluminium doped ZnO layer properties have initially been probed by deposition of Al:ZnO/i-ZnO bilayers directly on Mo/glass substrates. The band-gap energy of the Al:ZnO/i-ZnO reference layers was found to vary from 3.2 to 3.7 eV by varying the AlCl 3 solute dopant concentration from 1 to 20 mM. The electrical resistivity of indium-pellet contacted highly doped Al:ZnO sheet of In/Al:ZnO/i-ZnO/Mo/glass reference samples was of the order ρ~10 −5 Ω·cm; the respective carrier concentration of the order 10 22 cm −3 is commensurate with that of sputtered Al:ZnO layers. For crystal quality optimization of the bilayers by maintenance of the volatile selenium content of the chalcopyrite, they were subjected to 2-step annealing under successive temperature raise and N 2 flux regulation. The hydrostatic compressive strain due to Al 3+ incorporation in the ZnO lattice of bilayers processed successively with 5 and 12 mM AlCl 3 dopant was ε h = −0.046 and the respective stress σ h = −20 GPa. The surface reflectivity of maximum 5% over the scanned region of 180-900 nm and the (optical) band gap of E g = 3.67 eV were indicative of the high optical quality of the electrochemically deposited (ECD) Al:ZnO bilayers.

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Section: Kcn-etching Of Cu(inga)se 2 Surfacesupporting

confidence: 82%

Optimization of Electrochemically Deposited Highly Doped ZnO Bilayers on Ga-Rich Chalcopyrite Selenide for Cost-Effective Photovoltaic Device Technology

et al. 2016

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“…However, when a slight small-angle grain boundary formed in the incipient spontaneous nucleation, the oriented growth could continue in different orientations, promoting the growth of bidirectional adhesive crystals. [11,25] Secondly, the speed of pressure release, which determined the saturated-vapor pressure of the solvents and the amount of ZnO that the system could dissolve, is another key factor determining the ZnO morphology. Obviously, it could influence the crystal nucleation and growth processes.…”

Section: Growth Processmentioning

confidence: 99%

Growth of Bulk ZnO Single Crystals via a Novel Hydrothermal Oxidative Pressure‐Relief Route

Zheng

Guo²,

Qian

2005

Adv Funct Materials

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A novel hydrothermal oxidative pressure‐relief (HOPR) route has been successfully developed for the growth of high‐quality bulk ZnO single crystals, using metallic zinc and H2O2 as the raw materials, at 400 °C for 20 h in an alkali solvent. X‐ray powder diffraction reveals the ZnO crystals have a wurtzite structure. Two typical morphologies of perfect hexagonal pyramidal and hexagonal prismatic ZnO single crystals, and bidirectional adhesive crystals, are identified by scanning electron microscopy analysis. The average size of the single crystals is ∼ 1.0 mm in length and ∼ 0.2 mm in diameter. Short hexagonal prismatic, novel polygonal layer‐like, and nanowire ZnO crystals are also obtained by altering the reaction conditions, such as the reaction time and the speed of pressure release. The growth mechanism is a spontaneous nucleation and self‐growth process. This novel HOPR route gives an alternative choice for obtaining well‐crystallized ZnO bulk crystals from solution.

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“…[28][29][30][31] Recently it was shown that lateral epitaxial overgrowth (LEO) of ZnO films on (111) spinel substrates could be accomplished in water at 90°C. [32] One hydrothermal method has been commonly used to synthesize ZnO for more than 50 years [33,34] to grow single crystals (generally > 5 cm) by the slow dissolution of ZnO powder held at a higher temperature relative to a ZnO "seed" crystal held at a lower temperature, all within a high temperature (generally > 300°C) autoclave. Generally, "mineralizers" such as KOH, NaOH, and NH 4 OH are used to increase the solubility of ZnO powder and thus to increase the growth rate of the single crystals.…”

Section: Introductionmentioning

confidence: 99%

Growth of Heteroepitaxial ZnO Thin Films on GaN‐Buffered Al₂O₃ (0001) Substrates by Low‐Temperature Hydrothermal Synthesis at 90 °C

Kim

Andeen

et al. 2007

Adv Funct Materials

104

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Heteroepitaxial ZnO films are successfully grown on nondoped GaN‐buffered Al2O3 (0001) substrates in water at 90 °C using a two‐step process. In the first step, a discontinuous ZnO thin film (ca. 200 nm in thickness) consisting of hexagonal ZnO crystallites is grown in a solution containing Zn(NO3)·6 H2O and NH4NO3 at ca. pH 7.5 for 24 h. In the second step, a dense and continuous ZnO film (ca. 2.5 μm) is grown on the first ZnO thin film in a solution containing Zn(NO3)·6 H2O and sodium citrate at ca. pH 10.9 for 8 h. Scanning electron microscopy, X‐ray diffraction, UV‐vis absorption spectroscopy, photoluminescence spectroscopy, and Hall‐effect measurement are used to investigate the structural, optical, and electrical properties of the ZnO films. X‐ray diffraction analysis shows that ZnO is a monocrystalline wurtzite structure with an epitaxial orientation relationship of (0001)[11$ \bar 2 $0]ZnO∥(0001)[11$ \bar 2 $0]GaN. Optical transmission spectroscopy of the two‐step grown ZnO film shows a bandgap energy of 3.26 eV at room temperature. A room‐temperature photoluminescence spectrum of the ZnO film reveals only a main peak at ca. 380 nm without any significant defect‐related deep‐level emissions. The electrical property of ZnO film showed n‐type behavior with a carrier concentration of 3.5 × 1018 cm–3 and a mobility of 10.3 cm2 V–1 s–1.

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Hydrothermal Growth of Large Sound Crystals of Zinc Oxide

Cited by 230 publications

References 10 publications

Optimization of Electrochemically Deposited Highly Doped ZnO Bilayers on Ga-Rich Chalcopyrite Selenide for Cost-Effective Photovoltaic Device Technology

Optimization of Electrochemically Deposited Highly Doped ZnO Bilayers on Ga-Rich Chalcopyrite Selenide for Cost-Effective Photovoltaic Device Technology

Growth of Bulk ZnO Single Crystals via a Novel Hydrothermal Oxidative Pressure‐Relief Route

Growth of Heteroepitaxial ZnO Thin Films on GaN‐Buffered Al₂O₃ (0001) Substrates by Low‐Temperature Hydrothermal Synthesis at 90 °C

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Hydrothermal Growth of Large Sound Crystals of Zinc Oxide

Cited by 230 publications

References 10 publications

Optimization of Electrochemically Deposited Highly Doped ZnO Bilayers on Ga-Rich Chalcopyrite Selenide for Cost-Effective Photovoltaic Device Technology

Optimization of Electrochemically Deposited Highly Doped ZnO Bilayers on Ga-Rich Chalcopyrite Selenide for Cost-Effective Photovoltaic Device Technology

Growth of Bulk ZnO Single Crystals via a Novel Hydrothermal Oxidative Pressure‐Relief Route

Growth of Heteroepitaxial ZnO Thin Films on GaN‐Buffered Al2O3 (0001) Substrates by Low‐Temperature Hydrothermal Synthesis at 90 °C

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Growth of Heteroepitaxial ZnO Thin Films on GaN‐Buffered Al₂O₃ (0001) Substrates by Low‐Temperature Hydrothermal Synthesis at 90 °C