2017
DOI: 10.1007/s10971-017-4536-3
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Hydrothermal growth of undoped and boron doped ZnO nanorods as a photoelectrode for solar water splitting applications

Abstract: Undoped and boron-doped ZnO nanorods (NRs) were grown on ITO glass substrates by using hydrothermal techniques. The as grown nanorods were investigated by using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), UV-visible spectroscopy, and photoelectrochemical study. XRD spectra reveal the confirmations regarding the hexagonal wurtzite structure along with preferential orientation (002). The observation of (002) peak shows a red shift. The average size distribution of NRs in doped a… Show more

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Cited by 32 publications
(8 citation statements)
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“…The significant increase of photoresponse in the visible region well accounted for the PEC performance enhancement. Such successful doping strategy has attracted much attention, which resulted in a lots of researches on doped-ZnO NW arrays for PEC application, such as ZnO:N [333,334], ZnO:S [335], ZnO:B [336], ZnO:Co [337], ZnO:Ni [337], ZnO:K [337], ZnO:Na [337,338], ZnO: (Co, N) [339], ZnO: (Al, Cu) [340].…”
Section: Zno Photoanodesmentioning
confidence: 99%
“…The significant increase of photoresponse in the visible region well accounted for the PEC performance enhancement. Such successful doping strategy has attracted much attention, which resulted in a lots of researches on doped-ZnO NW arrays for PEC application, such as ZnO:N [333,334], ZnO:S [335], ZnO:B [336], ZnO:Co [337], ZnO:Ni [337], ZnO:K [337], ZnO:Na [337,338], ZnO: (Co, N) [339], ZnO: (Al, Cu) [340].…”
Section: Zno Photoanodesmentioning
confidence: 99%
“…ZnO has potential for application in optoelectronics and spintronic devices due to its unique properties such as a wide band gap (3.37 eV) at room temperature and its high exciton binding energy (60 meV) [5][6][7][8][9][10][11][12][13][14][15][16][17]. Its practical application areas include light-emitting diodes, ultraviolet photodetectors, solar cells and collectors, electrochromic devices, gas sensors, hydrogen production and surface acoustic wave devices [1,9,12,[14][15][16][18][19][20].…”
Section: Introductionmentioning
confidence: 99%
“…Researchers have intensively studied ZnO thin films and powders, including those doped with Cr, Mn, Fe, Co, Ni, Cu, Al, Ga, Cd, In, B, and N. The purpose of the dopant is to improve the structural, optical, and electrical properties of ZnO, and to adjust the band gap and super-cage-nano heterostructures with less cage mismatch [7,8,[10][11][12][13][14][15][16][17][21][22][23][24][25][26]. Devices based on ZnO nanostructures are alternatives to Group III-V semiconductor compounds such as GaN-, and GaAs-based devices.…”
Section: Introductionmentioning
confidence: 99%
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