Hydrothermal synthesis, characterization and properties of boron-doped ZnO sheets grown on p-diamond film

Charge Separation in TiO2/BDD Heterojunction Thin Film for Enhanced Photoelectrochemical Performance

“…Li et al report a comparatively high rectification property of ∼120 with leakage current ∼0.1 μA at potential 5 V with ZnO/BDD heterojunction . Therefore, reliable design of TiO 2 /BDD p–n junction is still lacking . In this study, we report the fabrication of reliable and stable p-n heterojunction by radio frequency (RF) sputter uniform TiO 2 thin film on microwave plasma chemical vapor deposition (MPCVD) grown BDD with very small leakage current and high amplification ratio of 63773 and at 5 V. In addition to the optimized heterojunction fabrication, electronic structure, carrier density, depletion region and photoelectrochemical performance of the heterojunction thin films were measured.…”

“…17 Therefore, reliable design of TiO 2 /BDD p−n junction is still lacking. 18 In this study, we report the fabrication of reliable and stable p-n heterojunction by radio frequency (RF) sputter uniform TiO 2 thin film on microwave plasma chemical vapor deposition (MPCVD) grown BDD with very small leakage current and high amplification ratio of 63773 and at 5 V. In addition to the optimized heterojunction fabrication, electronic structure, carrier density, depletion region and photoelectrochemical performance of the heterojunction thin films were measured. An enhanced photoelectrochemical activity of the suitably formed p−n junction TiO 2 /BDD photoelectrode than the bare TiO 2 photoelectrode is also demonstrated.…”

Photoluminescence and Electrical Properties of n-Ce-Doped ZnO Nanoleaf/p-Diamond Heterojunction

“…To explore the mechanism of the variation trend of I–V characteristics, the energy band diagrams of the heterojunction at various temperatures are established, as shown in Figure 5 . Owing to the Ce element doping and small thickness (7.9 nm) of the ZnO NLs, the morphology presents a large surface area-to-volume ratio and a great quantity of free surface and oxygen vacancy [ 39 ], leading the Ce-doped ZnO NLs to the heavy doping of degenerated semiconductors. For the degenerated n-ZnO, its Fermi level enters the conduction band, and the shallow oxygen vacancy energy level expands to the defect band close to the conduction band (the defect band contains a large number of oxygen vacancies).…”

Fabrication and characterization of Au-doped ZnO nanocandles synthesized on diamond film

“…After that, boric acid (H 3 BO 3 ) was added into the precursor solution with the concentration of 0.06 mol/L, then the solutions were transferred into a 40-mL-Teflon-lined stainless steel autoclave. Subsequently, the autoclave was sealed and heated to a constant temperature of 95 1C for 6 h [13]. The product of ZnO/diamond was thoroughly washed with distilled water to remove the residual salts before dried naturally in air.…”